Engineering oxide resistive switching materials for memristive device application

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 991-996

  Liu, Lifeng ^a   Chen, Bing ^a   Gao, Bin ^a   Zhang, Feifei ^a   Chen, Yuansha ^a   Liu, Xiaoyan ^a   Wang, Yi ^a   Han, Ruqi ^a   Kang, Jinfeng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; DEVICE PERFORMANCE; FIRST PRINCIPLE CALCULATIONS; MATERIAL ENGINEERING; PHYSICAL MODEL; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS;

GADOLINIUM; HAFNIUM OXIDES;

RANDOM ACCESS STORAGE;

EID: 79959343594     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6331-2     Document Type: Article

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