Porous silicon host matrix for deposition by atomic layer epitaxy

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 39-42

  Utriainen, M ^a   Lehto, S ^a   Niinisto L ^a   Ducso Cs ^b   Khanh, N Q ^b   Horvath Z E ^b   Barsony I ^b   Pecz B ^b  

^a AALTO UNIVERSITY   (Finland)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Atomic layer epitaxy; Nanocrystalline tin oxide; Porous silicon

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS;

ATOMIC LAYER EPITAXY; NANOCRYSTALLINE TIN OXIDE;

POROUS SILICON;

EID: 0031125095     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09428-X     Document Type: Article

References (6)

1. Cs. Dücso, N.Q. Khanh, Z. Horváth, I. Bársony, M. Utriainen, S. Lehto, M. Nieminen and L. Niinistö, J. Electrochem. Soc., 143 (1996) 683.
2. M. Nieminen, L. Niinistö and E. Rauhala, J. Mater. Chem., 6 (1996) 27.
3. T. Suntola, in D.T.J. Hurle (ed.), Handbook of Crystal Growth, Vol. 3, Elsevier, Amsterdam, 1994, p. 601.
4. H. Mölsä, L. Niinistö and M. Utriainen, Adv. Mater. Opt. Electr., 4 (1994) 389.
5. M. Ritala, PhD Thesis, University of Helsinki, 1994.
6. H. Viirola and L. Niinistö, Thin Solid Films, 249 (1994) 144.