Atomic layer deposition of Al2O3 thin films from a 1-methoxy-2-methyl-2-propoxide complex of aluminum and water

Chemistry of Materials

Volumn 17, Issue 3, 2005, Pages 626-631

  Min, Yo Sep ^a,b   Cho, Young Jin ^a   Hwang, Cheol Seong ^b  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITANCE; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ORGANOMETALLICS; RUTHENIUM COMPOUNDS; THIN FILMS;

ATOMIC LAYER DEPOSITION (ALD); CAPACITANCE VOLTAGE MEASUREMENTS; DIELECTRIC BREAKDOWN VOLTAGE; FLAT BAND VOLTAGES;

ALUMINA;

1 METHOXY 2 METHYL 2 PROPOXIDE; ALUMINUM; ALUMINUM HYDROXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL ANALYSIS; COMPLEX FORMATION; DEVICE; DIELECTRIC CONSTANT; MATERIAL STATE; MEASUREMENT; REACTION ANALYSIS; REFRACTION INDEX; TEMPERATURE; THERMOSTABILITY;

EID: 13444281994     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm048649g     Document Type: Article

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