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Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 293-299

Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process

(5) Schuisky, Mikael a Kukli, Kaupo b Aarik, Jaan b Lu, Jun a Hårsta, Anders a

a UPPSALA UNIVERSITY (Sweden)

b UNIVERSITY OF TARTU (Estonia)

Author keywords

A3. Atomic layer epitaxy; B1. Oxides; B1. Titanium compounds; B2. Dielectric materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; GRAIN BOUNDARIES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER EPITAXY;

TITANIUM DIOXIDE;

EID: 0036467262 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01804-8 Document Type: Article

Times cited : (43)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.