Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 91-94

  Ericsson, Per ^a   Bengtsson, Stefan ^a   Skarp, Jarmo ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Microchemistry Ltd   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; DENSIFICATION; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; LEAKAGE CURRENTS; OXIDES; REFRACTIVE INDEX; SILICON ON INSULATOR TECHNOLOGY; ALUMINA; DIELECTRIC FILMS; SEMICONDUCTING FILMS; SILICON WAFERS;

ATOMIC LAYER EPITAXY (ALE); CHARGE TRAPPING; MOBILE CHARGES; CAPACITANCE VOLTAGE TECHNIQUES;

DIELECTRIC FILMS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0031150226     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00022-1     Document Type: Article

References (12)

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