Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1833-1840

  Kukli, Kaupo ^a,b   Ritala, Mikko ^a   Aarik, Jaan ^b   Uustare, Teet ^b   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b UNIVERSITY OF TARTU   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED STATE; ATOMIC RATIO; BREAKDOWN FIELD; CAPACITOR STRUCTURES; CRYSTALLIZED FILMS; DEPOSITION TEMPERATURES; EFFECTIVE PERMITTIVITY; FILM QUALITY; ION-BEAM ANALYSIS; RESIDUAL IMPURITIES; SI (100) SUBSTRATE; TEMPERATURE RANGE; ZIRCONIUM DIOXIDE FILMS;

ATOMIC LAYER DEPOSITION; CRYSTAL GROWTH; GROWTH TEMPERATURE; HYDROGEN PEROXIDE; PERMITTIVITY; QUALITY CONTROL; SILICON; ZIRCONIUM; ZIRCONIUM ALLOYS;

AMORPHOUS FILMS;

EID: 0037103549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1493657     Document Type: Article

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