5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 253-257

  Jo, Sang Jin ^a   Ha, Jeong Sook ^a   Park, Nam Kyun ^a   Kang, Dong Kyun ^a   Kim, Byong Ho ^a  

^a Korea University   (South Korea)

Author keywords

Atomic layer deposition; High k dielectrics; La2O3; Post annealing effect

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT DENSITY; DEPOSITION; DIELECTRIC MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER DEPOSITION; HIGH-K DIELECTRICS; LA2O3; POST-ANNEALING EFFECT;

LANTHANUM COMPOUNDS;

EID: 33747018260     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.01.008     Document Type: Article

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