Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors

Thin Solid Films

Volumn 416, Issue 1-2, 2002, Pages 72-79

  Kukli, Kaupo ^a,b   Ritala, Mikko ^a   Sajavaara, Timo ^a   Keinonen, Juhani ^a   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b UNIVERSITY OF TARTU   (Estonia)

Author keywords

Crystallization; Dielectrics; Metal oxide semiconductor structure; Oxides

Indexed keywords

COMPOSITION; DEPOSITION; FILM GROWTH; GASES; HIGH TEMPERATURE OPERATIONS; IODINE; PERMITTIVITY;

ATOMIC LAYER DEPOSITION;

HAFNIUM COMPOUNDS;

EID: 0037009694     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00612-0     Document Type: Article

References (42)

1. Qi W.-J., Lee B.H., Nieh R., Kang L., Jeon Y., Onishi K., Lee J.C. Proc. SPIE. 3881:1999;24.
2. Smith R.C., Ma T., Hoilien N., Tsung L.Y., Bevan M.J., Colombo L., Roberts J., Campbell S.A., Gladfelter W.L. Adv. Mater. Opt. Electr. 10:2000;105.
3. Peters L. Semiconductor Int. 24:2001;61.
4. C. Hobbs, H. Tseng, K. Reid, B. Taylor, L. Dip, L. Hebert, R. Garcia, R. Hedge, J. Grant, D. Gilmer, A. Franke, V. Dhandaphani, N. Azrak, L. Prabhu, R. Rai, S. Bagchi, J. Conner, S. Backer, F. Dumbuya, B. Nguyen, P. Tobin, Tech. Dig. Int. Electr. Dev. Meet. (2000) 30.1.1.
5. Hubbard K.J., Schlom D.G. J. Mater. Res. 11:1996;2757.
6. Leng J., Li S., Opsal J., Aspnes D., Lee B.H. Proc. SPIE. 4099:2000;228.
7. Kang L., Lee B.-H., Qi W.-J., Jeon Y.-J., Nieh R., Gopalan S., Onishi K., Lee J.C. Mater. Res. Soc. Symp. Proc. 592:2000;81.
8. Balog M., Schrieber M., Patai S., Michman M. J. Cryst. Growth. 17:1972;298.
9. Balog M., Schrieber M., Michman M., Patai S. Thin Solid Films. 41:1977;247.
10. Lee B.H., Kang L., Nieh R., Qi W.-J., Lee J.C. Appl. Phys. Lett. 76:2000;1926.
11. Pakswer S., Skoug P. Proc. Int. Conf. Chem. Vapor Deposition. 2:1970;619.
12. Nishide T., Honda S., Matsuda M., Ide M. Thin Solid Films. 371:2000;61.
13. Braun A.E. Semiconductor Int. 24:2001;52.
14. Ritala M., Leskelä M., Niinistö L., Prohaska T., Friedbacher G., Grasserbauer M. Thin Solid Films. 250:1994;72.
15. Kattelus H., Ylilammi M., Salmi J., Ranta-Aho T., Nykänen E., Suni I. Mater. Res. Soc. Symp. Proc. 284:1993;511.
16. Aarik J., Aidla A., Kiisler A.-A., Uustare T., Sammelselg V. Thin Solid Films. 340:1999;110.
17. Aarik J., Aidla A., Mändar H., Sammelselg V., Uustare T. J. Cryst. Growth. 220:2000;105.
18. Aarik J., Aidla A., Mändar H., Uustare T., Kukli K., Schuisky M. Appl. Surf. Sci. 173:2001;15.
19. Kukli K., Ihanus J., Ritala M., Leskelä M. Appl. Phys. Lett. 68:1996;3737.
20. H. Kattelus, H. Ronkainen, in: A. Toubel, Y. Danto, J.-P. Klein, H. Grünbacher, (Eds.), Proc. 28th Eur. Solid State Device Res. Conf., Frontieres, Paris, France, 1998, 444-446.
21. K. Forsgren, Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, vol. 665, 2001, p. 37.
22. Sammelselg V., Aarik J., Aidla A., Kasikov A., Heikinheimo E., Peussa M., Niinistö L. J. Anal. At. Spectrom. 14:1999;523.
23. Suntola T. Thin Solid Films. 216:1992;84.
24. Ylilammi M., Ranta-aho T. Thin Solid Films. 232:1993;56.
25. Copel M., Gribelyuk M., Gusev E. Appl. Phys. Lett. 76:2000;436.
26. Powder Diffraction File, Joint Committee of Powder Diffraction Standards, ASTM, Philadelphia, PA, 1967, Card 6-318.
27. Wang J., Li H.P., Stevens R. J. Mater. Sci. 27:1992;5397.
28. Leger J.M., Atouf A., Tomaszewski P.E., Pereira A.S. Phys. Rev. B. 48:1993;93.
29. Powder Diffraction File, Joint Committee of Powder Diffraction Standards, ASTM, Philadelphia, PA, 1967, pp. 8-342.
30. Powder Diffraction File, Joint Committee of Powder Diffraction Standards, ASTM, Philadelphia, PA, 1967, pp. 21-904.
31. Kukli K., Ihanus J., Ritala M., Leskelä M. J. Electrochem. Soc. 144:1997;300.
32. Poveshchenko V.P., Kostyuchenko N.G., Kholodov V.M., Trofimova Zh.P., Naiko T.N. Sov. J. Opt. Technol. 51:1984;277.
33. Kukli K., Forsgren K., Ritala M., Leskelä M., Aarik J., Hårsta A. J. Electrochem. Soc. 148:2001;F227.
34. Powder Diffraction File, Joint Committee of Powder Diffraction Standards, ASTM, Philadelphia, PA, 1967, Card 42-1166.
35. Powder Diffraction File, Joint Committee of Powder Diffraction Standards, ASTM, Philadelphia, PA, 1967, Card 39-973.
36. Johnson R.S., Hong J.G., Lucovsky G. J. Vac. Sci. Technol. B. 19:2001;1606.
37. Callegari A., Cartier E., Gribelyuk M., Okorn-Schmidt H.-F., Zabel T. J. Appl. Phys. 90:2001;6466.
38. Zhang J.F., Zhao C.Z., Groeseneken G., Degraeve R., Ellis J.N., Beech C.D. J. Appl. Phys. 90:2001;1911.
39. Girault V. J. Appl. Phys. 88:2000;7179.
40. Schröder D.K. Semiconductor Material and Device Characterization. second ed. 1998;350 Wiley, New York.
41. Hori T. Gate Dielectrics and MOS ULSIs. 1997;Springer, Berlin/Heidelberg.
42. Houssa M., Afanas'ev V.V., Stesmans A., Heyns M.M. Appl. Phys. Lett. 77:2000;1885.