Low-temperature growth of SiO2 films by plasma-enhanced atomic layer deposition

ETRI Journal

Volumn 27, Issue 1, 2005, Pages 118-121

  Lim, Jung Wook ^a   Yun, Sun Jin ^a   Lee, Jin Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

C V; Poole Frenkel; SiO2 plasma enhanced atomic layer deposition (PEALD)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON TRAPS; FILM GROWTH; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PERMITTIVITY; PLASMA APPLICATIONS; SILICA;

C-V; DEPOSITION TEMPERATURE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION (PEALD); POOLE-FRENKEL;

THIN FILMS;

EID: 13844255279     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.05.0204.0023     Document Type: Article

References (12)

1. 2 at Room Temperature with the Use of Catalyzed Sequential Half-Reactions," Science, vol. 278, no. 12, Dec. 1997, pp. 1934-1936.
2. J. W. Lim, S. J. Yun, Y. H. Kim, C. Y. Sohn, and J. H. Lee, "Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs," Electrochem. Solid-State Lett., vol. 7, no. 9, Sept 2004, pp.G185-G187.
3. A. Rahtu, M. Ritala, and M. Leskelä, "Atomic Layer Deposition of Zirconium Titanium Oxide from Titanium Isopropoxide and Zirconium Chloride," Chem. Mater., vol. 13, Apr. 2001, pp. 1528-1532.
4. 4 Precursors by Plasma Enhanced Atomic Layer Deposition Method," J. Appl. Phys., vol. 92, no. 9, Nov. 2002, pp. 5443-5447.
5. S. J. Yun, J. W. Lim, and J. H. Lee, "Plasma Enhanced Atomic Layer Deposition of Zirconium Oxide Using Tetrakis (Ethylmethylamino) Zirconium and Oxygen," Electrochem. Solid-State Lett., vol. 7, no. 12, Dec. 2004, pp.F81-F84.
6. 5 Thin Films by Retarding Interface Oxide Growth on Si Substrates," Electrochem. Solid-State Lett., vol. 4, no. 7, July 2001, pp. F13-F14.
7. J. W. Lim and S. J. Yun, "Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition," Electrochem. Solid-State Lett., vol. 7, no. 8, Aug. 2004, pp. F45-F48.
8. S. J. Yun, J. W. Lim, and J. H. Lee, "Low Temperature Deposition of Aluminum Oxide on Polyethersulfone Substrate Using Plasma Enhanced Atomic Layer Deposition," Electrochem. Solid-State Lett., vol. 7, no. 1, Jan. 2004, pp. C13-C15.
9. 3-catalyzed Sequential Surface Reactions," Surface Science, vol. 447, no. 1, Feb. 2004, pp.81-90.
10. 2 Films Prepared by Atomic Layer Deposition with and without Plasma," Electrochem. Solid-State Lett., vol. 7, no. 11, Nov. 2004, pp.F23-F76.
11. C. H. Tseng, T. K. Chang, F. T. Chu, J. M. Shieh, B. T. Dai, and H. C. Cheng, "Investigation of Inductively Coupled Plasma Gate Oxide on Low Temperature Polycrystalline Silicon TFTs," IEEE Electron Device Lett., vol. 23, no. 6, June 2002, pp. 333-335.
12. K. Y. Yiang, W. J. Yoo, Q. Guo, and A. Krishnamoothy, "Investigation of Electrical Conduction in Carbon-Doped Silicon Oxide Using a Voltage Ramp Method," Appl. Phys. Lett., vol. 83, no. 3, July 2003, pp. 524-526.