Growth of SiO2 at room temperature with the use of catalyzed sequential half-reactions

Science

Volumn 278, Issue 5345, 1997, Pages 1934-1936

  Klaus, Jason W ^a   Sneh, Ofer ^a,b   George, Steven M ^a  

^a UNIVERSITY OF COLORADO   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

ARTICLE; CATALYSIS; CATALYST; CHEMICAL REACTION; IMAGING; PRIORITY JOURNAL; TEMPERATURE;

EID: 0031465733     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.278.5345.1934     Document Type: Article

References (21)

1. T. Ohmi, Jpn. J. Appl. Phys. 33, 6747 (1994); National Technology Roadmap for Semiconductors, SIA Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA 95129, USA (http://www.sematech.org/public/roadmap/ doc/toc.html), 1994.
2. S. M. George, A. W. Ott, J. W. Klaus, J. Phys. Chem. 100, 13121 (1996); C. H. L. Goodman and M. V. Pessa, J. Appl. Phys. 60, R65 (1986); T. Suntola, Thin Solid Films 216, 84 (1992).
3. S. M. George, A. W. Ott, J. W. Klaus, J. Phys. Chem. 100, 13121 (1996); C. H. L. Goodman and M. V. Pessa, J. Appl. Phys. 60, R65 (1986); T. Suntola, Thin Solid Films 216, 84 (1992).
4. S. M. George, A. W. Ott, J. W. Klaus, J. Phys. Chem. 100, 13121 (1996); C. H. L. Goodman and M. V. Pessa, J. Appl. Phys. 60, R65 (1986); T. Suntola, Thin Solid Films 216, 84 (1992).
5. Y. Nakagome and K. Itoh, IEICE Trans. E-74, 799 (1991).
6. W. C. O'Mara, Liquid Crystal Flat Panel Displays: Manufacturing Science and Technology (Van Nostrand Reinhold, New York, 1993).
7. M. Leskela, K. Kukli, J. Ihanus, M. Ritala, Appl. Phys. Lett. 68, 3737 (1996).
8. O. Sneh, M. L. Wise, A. W. Ott, L. A. Okada, S. M. George, Surf. Sci. 334, 135 (1995).
9. A. W. Ott, J. W. Klaus, J. M. Johnson, S. M. George, Thin Solid Films 292, 135 (1996).
10. S. M. George et al., Appl. Surf. Sci. 82-83, 460 (1994).
11. J. W. Klaus, A. W. Ott, J. M. Johnson, S. M. George, Appl. Phys. Lett. 70, 1092 (1997).
12. C. P. Tripp and M. L. Hair, J. Phys. Chem. 97, 5693 (1993).
13. 2 native oxide with a thickness of ∼20 Å on the Si(100) surface.
14. O. Sneh and S. M. George, J. Phys. Chem. 99, 4639 (1994).
15. -1. This behavior is similar to the properties of thermally grown oxide films on silicon. Because the substrates were not prepared under cleanroom conditions, the low breakdown voltages measured on some of the capacitors are probably associated with particulate and surface contamination on the substrate.
16. H. Noller and B. Mayerbock, Surf. Sci. 33, 82 (1972); G. Curthoys, V. Y. Davydov, A. V. Kiselev, S. A. Kiselev, B. V. Kuznetsov, J. Colloid Interface Sci. 48, 58 (1974).
17. H. Noller and B. Mayerbock, Surf. Sci. 33, 82 (1972); G. Curthoys, V. Y. Davydov, A. V. Kiselev, S. A. Kiselev, B. V. Kuznetsov, J. Colloid Interface Sci. 48, 58 (1974).
18. C. P. Tripp and M. L. Hair, Langmuir 8, 1961 (1992).
19. -1.
20. M. L. Hair and W. Hertl, J. Phys. Chem. 73, 2372 (1969).
21. Supported by the U.S. Office of Naval Research and the Air Force Office of Scientific Research.