Applications of atomic layer deposition to nanofabrication and emerging nanodevices

Thin Solid Films

Volumn 517, Issue 8, 2009, Pages 2563-2580

  Kim, Hyungjun ^a   Lee, Han Bo Ram ^a   Maeng, W J ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Atomic layer deposition; Nanodevice; Nanofabrication; Nanotechnology; Nanotemplate; Self assembly

Indexed keywords

APPLICATIONS; ATOMIC PHYSICS; ATOMS; DEPOSITION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SELF ASSEMBLY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

ATOMIC SCALE; ATOMIC-LAYER DEPOSITIONS; CONFORMALITY; CONTROLLED DEPOSITIONS; NANO-METER SCALE; NANO-SCALE DEVICES; NANODEVICE; NANOFABRICATION; NANOTEMPLATE; RESEARCH TRENDS; SCALING DOWNS; THIN-FILM DEPOSITION TECHNIQUES;

ATOMIC LAYER DEPOSITION;

EID: 59249104425     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.007     Document Type: Review

References (233)

1. Suntola T. Mater. Sci. Rep. 4 7 (1989)
2. Bedair S.M. Second International Workshop on the Measurement and Characterization of Ultrashallow Doping Profiles in Semiconductors (1994), AVS, Res. Triangle Park, North Carolina (USA) 179
3. Leskela M., and Ritala M. J. Phys. 2 8 (1999) IV: JP 9 pt
4. S.M. Rossnagel, H. Kim, Proc. of the IEEE 2001 International Interconnect Technology Conference, p. 3.
5. Kim H. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 21 6 (2003) 2231
6. Girgis E., Liu J., and Benkhedar M.L. Appl. Phys. Lett. 88 20 (2006) 202103
7. Fu X.L., Li P.G., Jin A.Z., Zhang H.Y., Yang H.F., and Tang W.H. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 23 2 (2005) 585
8. Tseng A.A., Notargiacomo A., and Chen T.P. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 23 3 (2005) 877
9. 2007.
10. Ritala M., and Leskela M. Nanotechnology 10 1 (1999) 19
11. Lu W., and Lieber C.M. J. Phys. D: Appl. Phys. 39 21 (2006) R387
12. Xia Y., Yang P., Sun Y., Wu Y., Mayers B., Gates B., Yin Y., Kim F., and Yan H. Adv. Mater. 15 5 (2003) 353
13. Wolf E.D. Nanophysics and Nanotechnology; An introduction to modern concepts in nanosciences (2004), Wiley-VCH, Weinheim
14. Ritala M., and Leskela M. Handbook of Thin Film Materials 1 (2002) 103
15. Ritala M. Appl. Surf. Sci. 112 (1997) 223
16. Leskela M., and Ritala M. Thin Solid Films 409 1 (2002) 138
17. Leskela M., Kemell M., Kukli K., Pore V., Santala E., Ritala M., and Lu J. Mater. Sci. Eng. C-Biomim. Supramol. Syst. 27 5-8 (2007) 1504
18. Knez K.N.L.N.M. Adv. Mater. 19 21 (2007) 3425
19. Gordon R.G., Hausmann D., Kim E., and Shepard J. Chem. Vap. Depos. 9 2 (2003) 73
20. Elam J.W., Routkevitch D., Mardilovich P.P., and George S.M. Chem. Mater. 15 18 (2003) 3507
21. Kim J.Y., Ahn J.H., Kang S.W., and Kim J.H. J. Appl. Phys. 101 7 (2007)
22. Kim H., McIntyre P.C., and Saraswat K.C. J. Mater. Res. 19 2 (2004) 643
23. Sechrist Z.A., Fabreguette F.H., Heintz O., Phung T.M., Johnson D.C., and George S.M. Chem. Mater. 17 13 (2005) 3475
24. Fabreguette F.H., Wind R.A., and George S.M. Appl. Phys. Lett. 88 1 (2006)
25. Fabreguette F.H., and George S.M. Thin Solid Films 515 18 (2007) 7177
26. Solanki R., Huo J., Freeouf J.L., and Miner B. Appl. Phys. Lett. 81 20 (2002) 3864
27. Park C.W., Yu H.Y., Pi U.H., and Choi S.Y. Nanotechnology 16 4 (2005) 361
28. Ylilammi M. Thin Solid Films 279 1-2 (1996) 124
29. Puurunen R.L. Chem. Vap. Depos. 9 5 (2003) 249
30. Kim H., and Rossnagel S.M. J. Vac. Sci. Technol. A: Vac. Surf. Films 20 3 (2002) 802
31. Johansson A., To?rndahl T., Ottosson L.M., Boman M., and Carlsson J.O. Mater. Sci. Eng. C 23 6-8 (2003) 823
32. Puurunen R.L., and Vandervorst W. J. Appl. Phys. 96 12 (2004) 7686
33. Nilsen O., Mohn C.E., Kjekshus A., and Fjellvag H. J. Appl. Phys. 102 2 (2007) 024906
34. Groner M.D., Fabreguette F.H., Elam J.W., and George S.M. Chem. Mater. 16 4 (2004) 639
35. Hoyas A.M., Schuhmacher J., Shamiryan D., Waeterloos J., Besling W., Celis J.P., and Maex K. J. Appl. Phys. 95 1 (2004) 381
36. Wilson C.A., Grubbs R.K., and George S.M. Chem. Mater. 17 23 (2005) 5625
37. Liang X.H., George S.M., and Weimer A.W. Chem. Mater. 19 22 (2007) 5388
38. Lim S.J., Kwon S.-j., Kim H., and Park J.-S. Appl. Phys. Lett. 91 18 (2007) 183517
39. Biercuk M.J., Monsma D.J., Marcus C.M., Backer J.S., and Gordon R.G. Appl. Phys. Lett. 83 12 (2003) 2405
40. Wilson C.A., McCormick J.A., Cavanagh A.S., Goldstein D.N., Weimer A.W., and George S.M. Thin Solid Films 516 18 (2008) 6175
41. Ten Eyck G.A., Pimanpang S., Bakhru H., Lu T.M., and Wang G.C. Chem. Vap. Depos. 12 (2006) 290
42. Niskanen A., Arstila K., Ritala M., and Leskela M. J. Electrochem. Soc. 152 7 (2005) F90
43. Kim S.K., Lee S.W., Hwang C.S., Min Y.S., Won J.Y., and Jeong J. J. Electrochem. Soc. 153 (2006) F69
44. Klaus J.W., Sneh O., and George S.M. Science 278 5345 (1997) 1934
45. McCool B.A., and DeSisto W.J. Chem. Vap. Depos. 10 4 (2004) 190
46. Klaus J.W., and George S.M. Surf. Sci. 447 1 (2000) 81
47. Ferguson J.D., Smith E.R., Weimer A.W., and George S.M. J. Electrochem. Soc. 151 8 (2004) G528
48. Du Y., Du X., and George S.M. J. Phys. Chem. C 111 1 (2007) 219
49. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243
50. Maeng W.J., and Kim H. Appl. Phys. Lett. 91 (2007) 092901
51. Kim H. Surf. Coat. Technol. 200 10 (2006) 3104
52. Lee H.-B.-R., and Kim H. Electrochem. Solid-State Lett. 9 11 (2006) G323
53. Lee H.-B.-R., Son J.Y., and Kim H. Appl. Phys. Lett. 90 21 (2007) 213509
54. Rudenko T., Collaert N., De Gendt S., Kilchytska V., Jurczak M., and Flandre D. Microelectron. Eng. 80 (2005) 386
55. Vellianitis G., Vellianitis G., van Dal M.J.H., Witters L., Curatola G.A.C.G., Doornbos G.A.D.G., Collaert N.A.C.N., Jonville C.A.J.C., Torregiani C.A.T.C., Lai L.S.A.L.L.S., Petry J.A.P.J., Pawlak B.J.A.P.B.J., Duffy R.A.D.R., Demand M.A.D.M., Beckx S.A.B.S., Mertens S.A.M.S., Delabie A.A.D.A., Vandeweyer T.A.V.T., Delvaux C.A.D.C., Leys F.A.L.F., Hikavyy A.A.H.A., Rooyackers R.A.R.R., Kaiser M.A.K.M., Weemaes R.G.R.A.W.R.G.R., Voogt F.A.V.F., Roberts H.A.R.H., Donnet D.A.D.D., Biesemans S.A.B.S., Jurczak M.A.J.M., and Lander R.J.P.A.L.R.J.P. In: van Dal M.J.H. (Ed). Electron Devices Meeting, 2007. IEDM 2007. IEEE International (2007) 681
56. Masahara M., Surdeanu R., Witters L., Doombos G., Nguyen V.H., Van Den Bosch G., Vrancken C., Devriendt K., Neuilly F., and Kunnen E. IEEE Electron Device Lett. 28 3 (2007) 217
57. Pavanello M.A., Martino J.A., Simoen E., Rooyackers R., Collaert N., and Claeys C. Solid State Electron. 51 2 (2007) 285
58. Kamata Y. Mater. Today 11 1-2 (2008) 30
59. Kim H., Chui C.O., Saraswat K.C., and McIntyre P.C. Appl. Phys. Lett. 83 13 (2003) 2647
60. Chi On C., Chi On C., Kim H., McIntyre P.C., and Saraswat K.C.A.S.K.C. IEEE Electron Device Lett. 25 5 (2004) 274
61. Gusev E.P., Shang H., Copel M., Gribelyuk M., D'Emic C., Kozlowski P., and Zabel T. Appl. Phys. Lett. 85 12 (2004) 2334
62. Frank M.M., Koester S.J., Copel M., Ott J.A., Paruchuri V.K., Shang H., and Loesing R. Appl. Phys. Lett. 89 11 (2006) 112905
63. Kim K.H., Gordon R.G., Ritenour A., and Antoniadis D.A. Appl. Phys. Lett. 90 21 (2007) 212104
64. Kaczer B., De Jaeger B., Nicholas G., Martens K., Degraeve R., Houssa M., Pourtois G., Leys F., Meuris M., and Groeseneken G. Microelectron. Eng. 84 9-10 (2007) 2067
65. Delabie A., Bellenger F., Houssa M., Conard T., Van Elshocht S., Caymax M., Heyns M., and Meuris M. Appl. Phys. Lett. 91 8 (2007) 082904
66. Bellenger F., Houssa M., Delabie A., Afanasiev V., Conard T., Caymax M., Meuris M., De Meyer K., and Heyns M.M. J. Electrochem. Soc. 155 2 (2008) G33
67. Perego M., Seguini G., Scarel G., and Fanciulli M. Surf. Interface Anal. 38 4 (2006) 494
68. Hong M., Kwo J., Kortan A.R., Mannaerts J.P., and Sergent A.M. Science 283 5409 (1999) 1897
69. Ye P.D., Wilk G.D., Yang B., Kwo J., Chu S.N.G., Nakahara S., Gossmann H.J.L., Mannaerts J.P., Hong M., Ng K.K., and Bude J. Appl. Phys. Lett. 83 1 (2003) 180
70. Ye P.D., Ye P.D., Wilk G.D., Kwo J., Yang B.A.Y.B., Gossmann H.J.L.A.G.H.J.L., Frei M.A.F.M., Chu S.N.G.A.C.S.N.G., Mannaerts J.P.A.M.J.P., Sergent M.A.S.M., Hong M.A.H.M., Ng K.K.A.N.K.K., and Bude J.A.B.J. IEEE Electron Device Lett. 24 4 (2003) 209
71. Ye P.D., Wilk G.D., Tois E.E., and Wang J.J. Appl. Phys. Lett. 87 1 (2005)
72. Lu H.-L., Sun L., Ding S.-J., Xu M., Zhang D.W., and Wang L.-K. Appl. Phys. Lett. 89 15 (2006) 152910
73. Shahrjerdi D., Tutuc E., and Banerjee S.K. Appl. Phys. Lett. 91 (2007) 063501
74. Frank M.M., Wilk G.D., Starodub D., Gustafsson T., Garfunkel E., Chabal Y.J., Grazul J., and Muller D.A. Appl. Phys. Lett. 86 15 (2005) 152904
75. Shahrjerdi D., Garcia-Gutierrez D.I., Akyol T., Bank S.R., Tutuc E., Lee J.C., and Banerjee S.K. Appl. Phys. Lett. 91 19 (2007) 193503
76. Dalapati G.K., Dalapati G.K., Yi T., Wei-Yip L., Hoe Keat Mun A.H.K.M., and Byung Jin Cho A.B.J.C. IEEE Trans. Electron Devices 54 8 (2007) 1831
77. Yang T., Xuan Y., Zemlyanov D., Shen T., Wu Y.Q., Woodall J.M., Ye P.D., Aguirre-Tostado F.S., Milojevic M., McDonnell S., and Wallace R.M. Appl. Phys. Lett. 91 14 (2007) 142122
78. Galatsis K., Wang K., Botros Y., Yang Y., Xie Y.-H., Stoddart J.F., Kaner R.B., Ozkan C., Liu J., Ozkan M., Zhou C., and Kim K.W. IEEE Circuits Devices Mag. (May/June 2006) 12
79. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbe E.F., and Chan K. Appl. Phys. Lett. 68 10 (1996) 1377
80. Dong-Won K., Taehoon K., and Banerjee S.K. IEEE Trans. Electron Devices 50 9 (2003) 1823
81. Jing Hao C., Jing Hao C., Ying Qian W., Won Jong Y., Yee-Chia Yeo A.Y.-C.Y., Samudra G.A.S.G., Chan D.S.A.C.D.S., An Yan Du A.A.Y.D., and Dim-Lee Kwong A.D.-L.K. IEEE Trans. Electron Devices 51 11 (2004) 1840
82. Park B., Choi S., Lee H.R., Cho K., and Kim S. Solid State Commun. 143 11-12 (2007) 550
83. Lee H.-R., Choi S., Cho K., and Kim S. Thin Solid Films 516 2-4 (2007) 412
84. Choi S., Park B., Kim H., Cho K., and Kim S. Semicond. Sci. Technol. 21 3 (2006) 378
85. Punchaipetch P., Uraoka Y., Fuyuki T., Tomyo A., Takahashi E., Hayashi T., Sano A., and Horii S. Appl. Phys. Lett. 89 9 (2006) 093502
86. Maikap S., Tzeng P.J., Lee H.Y., Wang C.C., Tien T.C., Lee L.S., and Tsai M.J. Appl. Phys. Lett. 91 4 (2007) 043114
87. Seol K.S., Choi S.J., Choi J.Y., Jang E.J., Kim B.K., Park S.J., Cha D.G., Song I.Y., Park J.B., and Park Y. Appl. Phys. Lett. 89 (2006) 083109
88. Yang J.Y., Kim J.H., Choi W.J., Do Y.H., Kim C.O., and Hong J.P. J. Appl. Phys. 100 (2006) 066102
89. Wang C.C., Wu J.Y., Chiou Y.K., Chang C.H., and Wu T.B. Appl. Phys. Lett. 91 (2007) 202110
90. Samanta S.K., Yoo W.J., Samudra G., Tok E.S., Bera L.K., and Balasubramanian N. Appl. Phys. Lett. 87 (2005) 113110
91. Samanta S.K., Singh P.K., Yoo W.J., Samudra G., Yeo Y.C., Bera L.K., and Balasubramanian N. IEDM Tech. Dig (2005) 170
92. Samanta S.K., Tan Z.Y.L., Yoo W.J., Samudra G., Lee S., Bera L.K., and Balasubramanian N. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 23 (2005) 2278
93. Park B., Cho K., Moon B.M., and Kim S. Microelectron. Eng. 84 5-8 (2007) 1627
94. Kim J., Yang J., Lee J., and Hong J. Appl. Phys. Lett. 92 1 (2008) 013512
95. Maikap S., Wang T.Y., Tzeng P.J., Lin C.H., Lee L.S., Yang J.R., and Tsai M.J. Appl. Phys. Lett. 90 25 (2007) 253108
96. Yim S.-S., Lee M.-S., Kim K.-S., and Kim K.-B. Appl. Phys. Lett. 89 9 (2006) 093115
97. Zhang M., Chen W., Ding S.J., Wang X.P., Zhang D.W., and Wang L.K. J. Vac. Sci. Technol. A: Vac. Surf. Films 25 (2007) 775
98. Farmer D.B., and Gordon R.G. J. Appl. Phys. 101 (2007) 124503
99. Lee J., Choi S., Lee C., Kang Y., and Kim D. Appl. Surf. Sci. 253 8 (2007) 3969
100. Choi B.J., Jeong D.S., Kim S.K., Rohde C., Choi S., Oh J.H., Kim H.J., Hwang C.S., Szot K., Waser R., Reichenberg B., and Tiedke S. J. Appl. Phys. 98 3 (2005) 033715
101. Choi B.J., Choi S., Kim K.M., Shin Y.C., Hwang C.S., Hwang S.-Y., Cho S.-s., Park S., and Hong S.-K. Appl. Phys. Lett. 89 1 (2006) 012906
102. Kim K.M., Choi B.J., Koo B.W., Choi S., Jeong D.S., and Hwang C.S. Electrochem. Solid-State Lett. 9 12 (2006) G343
103. You Y.-H., So B.-S., Hwang J.-H., Cho W., Lee S.S., Chung T.-M., Kim C.G., and An K.-S. Appl. Phys. Lett. 89 22 (2006) 222105
104. Javey A., Kim H., Brink M., Wang Q., Ural A., Guo J., McIntyre P., McEuen P., Lundstrom M., and Dai H. Nat. Mater. 1 4 (2002) 241
105. Javey A., Guo J., Farmer D.B., Wang Q., Wang D., Gordon R.G., Lundstrom M., and Dai H. Nano Lett. 4 3 (2004) 447
106. Javey A., Guo J., Farmer D.B., Wang Q., Yenilmez E., Gordon R.G., Lundstrom M., and Dai H. Nano Lett. 4 7 (2004) 1319
107. Kim S.K., Xuan Y., Ye P.D., Mohammadi S., Back J.H., and Shim M. Appl. Phys. Lett. 90 16 (2007) 163108
108. Javey A., Guo J., Farmer D.B., Wang Q., Yenilmez E., Gordon R.G., Lundstrom M., and Dai H. Nano Lett. 4 7 (2004) 1319
109. Farmer D.B., and Gordon R.G. Electrochem. Solid-State Lett. 8 4 (2005)
110. Farmer D.B., and Gordon R.G. Nano Lett. 6 4 (2006) 699
111. Lu Y.R., Bangsaruntip S., Wang X.R., Zhang L., Nishi Y., and Dai H.J. J. Am. Chem. Soc. 128 11 (2006) 3518
112. Xuan Y., Wu Y.Q., Shen T., Qi M., Capano M.A., Cooper J.A., and Ye P.D. Appl. Phys. Lett. 92 (2008) 013101
113. Williams J.R., DiCarlo L., and Marcus C.M. Science 317 5838 (2007) 638
114. Wang D., Wang Q., Javey A., Tu R., Dai H., Kim H., McIntyre P.C., Krishnamohan T., and Saraswat K.C. Appl. Phys. Lett. 83 12 (2003) 2432
115. Wang D., Chang Y.L., Wang Q., Cao J., Farmer D.B., Gordon R.G., and Dai H. J. Am. Chem. Soc. 126 37 (2004) 11602
116. Whang S.J., Lee S.J., Yang W.F., Cho B.J., and Kwong D.L. Appl. Phys. Lett. 91 7 (2007) 072105
117. Lu W., Xiang J., Timko B.P., Wu Y., and Lieber C.M. Proc. Natl. Acad. Sci. U. S. A. 102 29 (2005) 10046
118. Xiang J., Lu W., Hu Y.J., Wu Y., Yan H., and Lieber C.M. Nature 441 7092 (2006) 489
119. Xiang J., Vidan A., Tinkham M., Westervelt R.M., and Lieber C.M. Nat. Nano 1 3 (2006) 208
120. Hu Y., Churchill H.O.H., Reilly D.J., Xiang J., Lieber C.M., and Marcus C.M. Nature 2 (2007) 622
121. Keem K., Jeong D.Y., Kim S., Lee M.S., Yeo I.S., Chung U.I., and Moon J.T. Nano Lett 6 7 (2006) 1454
122. Jin C.B., Yang J.E., and Jo M.H. Appl. Phys. Lett. 88 19 (2006)
123. Yang J.E., Jin C.B., Kim C.J., and Jo M.H. Nano Lett. 6 12 (2006) 2679
124. Kim C.J., Yang J.E., Lee H.S., Jang H.M., Jo M.H., Park W.H., Kim Z.H., and Maeng S. Appl. Phys. Lett. 91 3 (2007)
125. Zhang L., Tu R., and Dai H. Nano Lett. 6 12 (2006) 2785
126. Hoivik N.D., Elam J.W., Linderman R.J., Bright V.M., George S.M., and Lee Y.C. Sens. Actuators: A. Phys. 103 1-2 (2003) 100
127. Scharf T.W., Prasad S.V., Mayer T.M., Goeke R.S., and Dugger M.T. J. Mater. Res. 19 12 (2004) 3443
128. Sechrist Z.A., Schwartz B.T., Lee J.H., McCormick J.A., Piestun R., Park W., and George S.M. Chem. Mater. 18 15 (2006) 3562
129. Povey I.M., Whitehead D., Thomas K., Pemble M.E., Bardosova M., and Renard J. Appl. Phys. Lett. 89 10 (2006)
130. Graugnard E., Gaillot D.P., Dunham S.N., Neff C.W., Yamashita T., and Summers C.J. Appl. Phys. Lett. 89 18 (2006)
131. Raulio M., Pore V., Areva S., Ritala M., Leskel M., Lind?n M., Rosenholm J.B., Lounatmaa K., and Salkinoja-Salonen M. J. Ind. Microbiol. Biotech. 33 4 (2006) 261
132. Ferguson J.D., Weimer A.W., and George S.M. Chem. Mater. 12 11 (2000) 3472
133. Ferguson J.D., Yoder A.R., Weimer A.W., and George S.M. Appl. Surf. Sci. 226 4 (2004) 393
134. Wank J.R., George S.M., and Weimer A.W. Powder Technol. 121 2-3 (2001) 195
135. Wank J.R., George S.M., and Weimer A.W. Powder Technol. 142 1 (2004) 59
136. Hakim L.F., George S.M., and Weimer A.W. Nanotechnology 16 7 (2005) S375
137. McCormick J.A., Rice K.P., Paul D.F., Weimer A.W., and George S.M. Chem. Vap. Depos. 13 9 (2007) 491
138. Hakim L.F., Vaughn C.L., Dunsheath H.J., Carney C.S., Liang X., Li P., and Weimer A.W. Nanotechnology 18 345603 (2007) 345603
139. Min B., Lee J.S., Hwang J.W., Keem K.H., Kang M.I., Cho K., Sung M.Y., Kim S., Lee M.S., Park S.O., and Moon J.T. J. Cryst. Growth 252 4 (2003) 565
140. Kim S.S., Gabriel N.T., Song W.B., and Talghader J.J. Opt. Express 15 (2007) 16285
141. Qin Y., Lee S.M., Pan A., Gosele U., and Knez M. Nano Lett. 8 1 (2008) 114
142. Law M., Greene L.E., Radenovic A., Kuykendall T., Liphardt J., and Yang P. J. Phys. Chem. B 110 45 (2006) 22652
143. Wang C.N.E.G.Y.D.J.K.L.P.R.T.Z.W.C.S.X. Adv. Mater. 17 17 (2005) 2103
144. Hwang J., Min B., Lee J., Keem K., Cho K., Sung M.Y., Lee M.S., and Kim S. Adv. Mater. (Weinheim) 16 5 (2004) 422
145. Fan H.J., Knez M., Scholz R., Nielsch K., Pippel E., Hesse D., Zacharias M., and Gosele U. Nat. Mater. 5 8 (2006) 627
146. Lee J.S., Min B., Cho K., Kim S., Park J., Lee Y.T., Kim N.S., Lee M.S., Park S.O., and Moon J.T. J. Cryst. Growth 254 3 (2003) 443
147. Herrmann C.F., Fabreguette F.H., Finch D.S., Geiss R., and George S.M. Appl. Phys. Lett. 87 (2005) 123110
148. Green J.M., Dong L., Gutu T., Jiao J., Conley, and Ono Y. J. Appl. Phys. 99 9 (2006) 094308
149. Min Y.-S., Bae E.J., Park J.B., Kim U.J., Park W., Song J., Hwang C.S., and Park N. Appl. Phys. Lett. 90 26 (2007) 263104
150. Min Y.S., Bae E.J., Jeong K.S., Cho Y.J., Lee J.H., Choi W.B., and Park G.S. Adv. Mater. 15 12 (2003) 1019
151. Wang C.C., Kei C.C., Yu Y.W., and Perng T.P. Nano Lett. 7 6 (2007) 1566
152. Peng Q., Sun X.Y., Spagnola J.C., Hyde G.K., Spontak R.J., and Parsons G.N. Nano Lett. 7 3 (2007) 719
153. Sotiropoulou S., Sierra-Sastre Y., Mark S.S., and Batt C.A. Chem. Mater. 20 3 (2008) 821
154. Kemell M., Pore V., Ritala M., Leskela M., and Linden M. J. Am. Chem. Soc. 127 41 (2005) 14
155. Kemell M., Pore V., Ritala M., and Leskel M. Chem. Vap. Depos. (Print) 12 7 (2006) 419
156. Knez M., Kadri A., Wege C., Go?sele U., Jeske H., and Nielsch K. Nano Lett. 6 6 (2006) 1172
157. Huang J., Wang X., and Wang Z.L. Nano Lett. 6 10 (2006) 2325
158. Huang J., Wang X., and Wang Z.L. Nanotechnology 19 025602 (2008) 025602
159. Chong M.A.S., Zheng Y.B., Gao H., and Tan L.K. Appl. Phys. Lett. 89 23 (2006)
160. Franklin A.D., Maschmann M.R., DaSilva M., Janes D.B., Fisher T.S., and Sands T.D. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 25 2 (2007) 343
161. Sharma G., Chong S.C., Ebin L., Hui C., Gan C.L., and Kripesh V. Thin Solid Films 515 7-8 (2007) 3315
162. Shin H., Jeong D.K., Lee J., Sung M.M., and Kim J. Adv. Mater. 16 14 (2004) 1197
163. Triani G., Evans P.J., Attard D.J., Prince K.E., Bartlett J., Tan S., and Burford R.P. J. Mater. Chem. 16 14 (2006) 1355
164. Thompson G.E. Thin Solid Films 297 1-2 (1997) 192
165. Masuda H., and Satoh M. Jpn. J. Appl. Phys. Part 2: Lett. 35 1 B (1996)
166. Elam J.W., Xiong G., Han C.Y., Wang H.H., Birrell J.P., Welp U., Hryn J.N., Pellin M.J., Baumann T.F., and Poco J.F. J. Nanomater. 2006 1 (2006) 22
167. Martinson A.B.F., Elam J.W., Hupp J.T., and Pellin M.J. Nano Lett. 7 8 (2007) 2183
168. Elam J.W., Libera J.A., Pellin M.J., and Stair P.C. Appl. Phys. Lett. 91 24 (2007)
169. Kemell M., Pore V., Tupala J., Ritala M., and Leskela M. Chem. Mater. 19 7 (2007) 1816
170. Liao H.C., Kuo P.C., Lin C.C., and Chen S.Y. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 24 (2006) 2198
171. Daub M., Knez M., Goesele U., and Nielsch K. J. Appl. Phys. 101 9 (2007)
172. Bachmann J., Jing J., Knez M., Barth S., Shen H., Mathur S., Gosele U., and Nielsch K. J. Am. Chem. Soc. 129 31 (2007) 9554
173. Pellin M.J., Stair P.C., Xiong G., Elam J.W., Birrell J., Curtiss L., George S.M., Han C.Y., Iton L., Kung H., Kung M., and Wang H.H. Catal. Lett. 102 3-4 (2005) 127
174. Xia Y., and Whitesides G.M. Angew. Chem. Int. Ed. 37 5 (1998) 550
175. Kim W.-H., Park S.-J., Son J.-Y., and Kim H. Nanotechnology 19 4 (2008) 045302
176. Sander M.S., Cote M.J., Gu W., Kile B.M., and Tripp C.P. Adv. Mater. 16 22 (2004) 2052
177. Yang C.J., Wang S.M., Liang S.W., Chang Y.H., Chen C., and Shieh J.M. Appl. Phys. Lett. 90 (2007) 033104
178. Tan L.K., Chong A.S.M., Tang X.S.E., and Gao H. J. Phys. Chem. C 111 13 (2007) 4964
179. Rolison D.R. Science 299 5613 (2003) 1698
180. Kucheyev S.O., Biener J., Wang Y.M., Baumann T.F., Wu K.J., van Buuren T., Hamza A.V., Satcher Jr. J.H., Elam J.W., and Pellin M.J. Appl. Phys. Lett. 86 (2005) 083108
181. Elam J.W., Libera J.A., Pellin M.J., Zinovev A.V., Greene J.P., and Nolen J.A. Appl. Phys. Lett. 89 5 (2006)
182. Baumann T.F., Biener J., Wang Y.M., Kucheyev S.O., Nelson E.J., Satcher J.H., Elam J.W., Pellin M.J., and Hamza A.V. Chem. Mater. 18 26 (2006) 6106
183. Biener J., Baumann T.F., Wang Y.M., Nelson E.J., Kucheyev S.O., Hamza A.V., Kemell M., Ritala M., and Leskela M. Nanotechnology 18 5 (2007)
184. Zhang J., Wang, Zhong-lin, Liu J., Chen S., and Liu G.-y. Self-assembled Nanostructures (2003), Kluwer Academic/Plenum Publishers, New York
185. Segalman R.A. Mater. Sci. Eng. R Rep. 48 6 (2005) 191
186. Black C.T. Appl. Phys. Lett. 87 16 (2005) 163116
187. Kim S.-J., Maeng W.J., Lee S.K., Park D.H., Bang S.H., Kim H., and Sohn B.-H. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 26 1 (2008) 189
188. Xiao S., Yang X., Edwards E.W., La Y.-H., and Nealey P.F. Nanotechnology 16 7 (2005) S324
189. Zschech D., Kim D.H., Milenin A.P., Scholz R., Hillebrand R., Hawker C.J., Russell T.P., Steinhart M., and Gosele U. Nano Lett. 7 6 (2007) 1516
190. Shin C.K., Maier G., Andreaus B., and Scherer G.G. J. Membr. Sci. 245 1-2 (2004) 147
191. Guarini K.W., Black C.T., Zhang Y., Kim H., and Babich E. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 20 (2002) 2788
192. Black C.T., Guarini K.W., Zhang Y., Kim H., Benedict J., Sikorski E., Babich I.V., and Milkove K.R. IEEE Electron Device Lett. 25 9 (2004) 622
193. Ras R.H.A., Kemell M., De Wit J., Ritala M., Ten Brinke G., Leskela M., and Ikkala O. Adv. Mater. 19 1 (2007) 102
194. Hulteen J.C., and Van Duyne R.P. J. Vac. Sci. Technol. A 13 3 (1995) 1553
195. Whitney A.V., Elam J.W., Zou S.L., Zinovev A.V., Stair P.C., Schatz G.C., and Van Duyne R.P. J. Phys. Chem. B 109 43 (2005) 20522
196. Wang X.D., Graugnard E., King J.S., Wang Z.L., and Summers C.J. Nano Lett. 4 11 (2004) 2223
197. Rugge A., Becker J.S., Gordon R.G., and Tolbert S.H. Nano Lett. 3 9 (2003) 1293
198. Rugge A., Park J.S., Gordon R.G., and Tolbert S.H. J. Phys. Chem. B 109 9 (2005) 3764
199. Scharrer M., Wu X., Yamilov A., Cao H., and Chang R.P.H. Appl. Phys. Lett. 86 15 (2005)
200. King J.S., Heineman D., Graugnard E., and Summers C.J. Appl. Surf. Sci. 244 1-4 (2005) 511
201. King J.S., Graugnard E., and Summers C.J. Adv. Mater. 17 8 (2005) 1010
202. King J.S., Graugnard E., and Summers C.J. Appl. Phys. Lett. 88 8 (2006)
203. Graugnard E., Chawla V., Lorang D., and Summers C.J. Appl. Phys. Lett. 89 21 (2006)
204. King J.S., Graugnard E., Roche O.M., Sharp D.N., Scrimgeour J., Denning R.G., Turberfield A.J., and Summers C.J. Adv. Mater. 18 12 (2006) 1561
205. Lee J.H., Leung W., Ahn J., Lee T., Park I.S., Constant K., and Ho K.M. Appl. Phys. Lett. 90 15 (2007)
206. Park M.H., Jang Y.J., Sung-Suh H.M., and Sung M.M. Langmuir 20 6 (2004) 2257
207. Akkerman H.B., Blom P.W.M., de Leeuw D.M., and de Boer B. Nature 441 7089 (2006) 69
208. Zamborini F.P., and Crooks R.M. Langmuir 14 12 (1998) 3279
209. Laibinis P.E., Whitesides G.M., Allara D.L., Tao Y.T., Parikh A.N., and Nuzzo R.G. J. Am. Chem. Soc. 113 19 (1991) 7152
210. Blum A.S., Kushmerick J.G., Long D.P., Patterson C.H., Yang J.C., Henderson J.C., Yao Y., Tour J.M., Shashidhar R., and Ratna B.R. Nat. Mater. 4 2 (2005) 167
211. Lee J.P., Jang Y.J., and Sung M.M. Adv. Funct. Mater. 13 11 (2003) 873
212. Dube A., Sharma M., Ma P.F., Ercius P.A., Muller D.A., and Engstrom J.R. J. Phys. Chem. C 111 29 (2007) 11045
213. Dube A., Sharma M., Ma P.F., and Engstrom J.R. Appl. Phy. Lett. 89 16 (2006) 164108
214. Haran M., Engstrom J.R., and Clancy P. J. Am. Chem. Soc. 128 3 (2006) 836
215. Xu Y., and Musgrave C.B. Chem. Mater. 16 4 (2004) 646
216. Seo E.K., Lee J.W., Sung-Suh H.M., and Sung M.M. Chem. Mater. 16 10 (2004) 1878
217. Chen R., Kim H., McIntyre P.C., and Bent S.F. Appl. Phys. Lett. 84 (2004) 4017
218. Chen R., Kim H., McIntyre P.C., and Bent S.F. Chem. Mater. 17 3 (2005) 536
219. Chen R., and Bent S.F. Adv. Mater. 18 8 (2006) 1086
220. Chen R., and Bent S.F. Chem. Mater. 18 16 (2006) 3733
221. Jiang X.R., Chen R., and Bent S.F. Surf. Coat. Technol. 201 22-23 (2007) 8799
222. Jiang X., and Bent S.F. J. Electrochem. Soc. 154 12 (2007) D648
223. Park K.J., Doub J.M., Gougousi T., and Parsons G.N. Appl. Phys. Lett. 86 (2005) 051903
224. Hong J., Porter D.W., Sreenivasan R., McIntyre P.C., and Bent S.F. Langmuir 23 3 (2007) 1160
225. Farm E., Kernell M., Ritala M., and Leskel M. Chem. Vap. Depos. (Print) 12 7 (2006) 415
226. Bae C., Moon J., Shin H., Kim J., and Sung M.M. J. Am. Chem. Soc. 129 46 (2007) 14232
227. Bae C., Shin H., Moon J., and Sung M.M. Chem. Mater. 18 5 (2006) 1085
228. Sinha A., Hess D.W., and Henderson C.L. Electrochem. Solid-State Lett. 9 (2006) G330
229. Sinha A., Hess D.W., and Henderson C.L. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 25 5 (2007) 1721
230. Sinha A., Hess D.W., and Henderson C.L. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 24 6 (2006) 2523
231. Lee B.H., Ryu M.K., Choi S.Y., Lee K.H., Im S., and Sung M.M. J. Am. Chem. Soc. 129 51 (2007) 16034
232. Lee K.H., Choi J.-M., Im S., Lee B.H., Im K.K., Sung M.M., and Lee S. Appl. Phys. Lett. 91 12 (2007) 123502
233. Cha S.H., Oh M.S., Lee K.H., Im S., Lee B.H., and Sung M.M. Appl. Phys. Lett. 92 2 (2008) 023506