Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 983-990

  Yoon, Sung Min ^a   Yang, Shinhyuk ^a   Jung, Soon Won ^a   Byun, Chun Won ^a   Ryu, Min Ki ^a   Cheong, Woo Seok ^a   Kim, Byeong Hoon ^a   Oh, Him Chan ^a   Park, Sang Hee Ko ^a   Hwang, Chi Sun ^a   Kang, Seung Youl ^a   Ryu, Ho Jun ^a   Yu, Byoung Gon ^a  

^a IT Convergence Technology Research Laboratory   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; CHANNEL CONDUCTANCE; FABRICATION PROCEDURE; FERROELECTRIC POLARIZATION; GATE INSULATOR; LARGE-AREA ELECTRONICS; MEMRISTOR; OUTPUT CHARACTERISTICS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) [P(VDF-TRFE)]; PROCESS TEMPERATURE;

FERROELECTRICITY; MEMRISTORS; PASSIVE FILTERS; SEMICONDUCTOR DEVICES; THIN FILM TRANSISTORS;

RESISTORS;

EID: 79959336003     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6280-9     Document Type: Article

References (36)

1. L.O. Chua, IEEE Trans. Circuit Theory 18, 507 (1971).
2. D.B. Strukov, G.S. Snider, D.R. Stewart, Nature 7191, 80 (2008).
3. J.J. Yang, M.D. Pickett, X. Li, A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008).
4. S.H. Jo, K.H. Kim, W. Lu, Nano Lett. 9, 870 (2009).
5. K.H. Kim, B.S. Kang, M.J. Lee, S.E. Ahn, C.B. Lee, G. Stefanovich, W.X. Xianyu, C.J. Kim, Y. Park, IEEE Electron Device Lett. 30, 1036 (2009).
6. Q. Xia, W. Robinett, M.W. Cumbie, N. Banerjee, T.J. Carinali, J.J. Yang, W. Wu, X. Li, W.M. Tong, D.B. Strukov, S.S. Snider, G.M. Ribeiro, R.S. Williams, Nano Lett. 9, 3640 (2009).
7. W. Robinett, M. Pickett, J. Borghetti, Q. Xia, S.S. Snider, G.M. Ribeiro, R.S.Williams, Nanotechnology 21, 235203 (2010).
8. Y.V. Pershin, D.V. Massimiliano, EEE Trans. Circuits Syst. I 57, 1857 (2010).
9. S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P. Mazumder, W. Lu, Nano Lett. 10, 1297 (2010).
10. T. Berzina, A. Smerieri, M. Bernabo, A. Pucci, G. Ruggeri, V. Erokhin, M.P. Fontana, J. Appl. Phys. 105, 124515 (2009).
11. H. Choi, H. Jung, J. Lee, J. Yoon, J. Park, D. Seong, W. Lee, M. Hasan, G.Y. Jung, H. Hwang, Nanotechnology 20, 345201 (2009).
12. S. Thakoor, A. Moopenn, T. Daud, A.P. Thakoor, J. Appl. Phys. 67, 3132 (1990).
13. D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.W. Lee, G.H. Kim, X.S. Li, G.S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010).
14. R. Jung, M.J. Lee, S. Seo, D.C. Kim, G.S. Park, K. Kim, S. Ahn, Y. Park, I.K. Yoo, J.S. Kim, B.H. Park, Appl. Phys. Lett. 91, 2212 (2007).
15. A. Asamitsu, Y. Tomioka, H. Kuwahara, Y. Tokura, Nature 388, 50 (1997).
16. J.W. Park, M.K. Yang, K. Jung, J.K. Lee, IEEE Trans. Electron Devices 55, 1782 (2008).
17. U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, M.N. Kozicki, IEEE Trans. Electron Devices 56, 1040 (2009).
18. H.X. Guo, L.G. Gao, Y.D. Xia, K. Jiang, B. Xu, Z.G. Liu, J. Yin, Appl. Phys. Lett. 94, 153504 (2009).
19. X. Wang, Y. Chen, H. Xi, H. Li, D. Dimitrov, IEEE Electron Device Lett. 30, 294 (2009).
20. M.G. Bray, D.H. Werner, Appl. Phys. Lett. 96, 073504 (2010).
21. R. Muller, C. Krebs, L. Goux, D.J. Wouters, J. Genoe, P. Heremans, S. Spiga, M. Fanciulli, IEEE Electron Device Lett. 30, 620 (2009).
22. S. Paul, IEEE Trans. Nanotechnol. 6, 191 (2007).
23. H. Ishiwara, Jpn. J. Appl. Phys. 32, 442 (1993).
24. S.M. Yoon, E. Tokumitsu, H. Ishiwara, IEEE Trans. Electron Devices 47, 1630 (2000).
25. S.M. Yoon, E. Tokumitsu, H. Ishiwara, Jpn. J. Appl. Phys. 38, 2289 (1999).
26. S.M. Yoon, E. Tokumitsu, H. Ishiwara, IEEE Electron Device Lett. 20, 229 (1999).
27. S.M. Yoon, E. Tokumitsu, H. Ishiwara, Jpn. J. Appl. Phys. 39, 2119 (2000).
28. R.C.G. Naber, C. Tanase, P.W.M. Blom, G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Setayesh, D.M. Leeuw, Nat. Mater. 4, 243 (2005).
29. S.J. Kang, I. Bae, Y.J. Park, T.H. Park, J. Sung, S.C. Yoon, K.H. Kim, D.H. Choi, C. Park, Adv. Funct. Mater. 9, 1609 (2009).
30. S.M. Yoon, S. Yang, C. Byun, S.H. Ko Park, D.H. Cho, S.W. Jung, O.S. Kwon, C.S. Hwang, Adv. Funct. Mater. 20, 921 (2010).
31. K.H. Lee, G. Lee, K. Lee, M.S. Oh, S. Im, S.M. Yoon, Adv. Mater. 21, 4287 (2009).
32. S.M. Yoon, S. Yang, S.W. Jung, C.W. Byun, S.H. Ko Park, C.S. Hwang, G.G. Lee, E. Tokumitsu, H. Ishiwara, Appl. Phys. Lett. 96, 232903 (2010).
33. S.H. Ko Park, D.H. Cho, C.S. Hwang, S. Yang, M.K. Ryu, C.W. Byun, S.M. Yoon, W.S. Cheong, K.I. Cho, J.H. Jeon, ETRI J. 31, 653 (2009).
34. K. Koga, H. Ohigashi, J. Appl. Phys. 59, 2142 (1986).
35. S.M. Yoon, S. Yang, S.H. Ko Park, S.W. Jung, C.W. Byun, D.H. Cho, S.Y. Kang, C.S. Hwang, B.G. Yu, Jpn. J. Appl. Phys. 49, 04DJ06 (2010).
36. T. Furukawa, S. Kanai, A. Okada, Y. Takahashi, R. Yamamoto, J. Appl. Phys. 105, 061636 (2009).