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Volumn 143, Issue 2, 1996, Pages 683-687

Deposition of tin oxide into porous silicon by atomic layer epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMISORPTION; COMPOSITION; DEPOSITION; DIFFUSION; ELLIPSOMETRY; EPITAXIAL GROWTH; POROSITY; POROUS SILICON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0030086051     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836500     Document Type: Article
Times cited : (69)

References (21)
  • 11
    • 5644266372 scopus 로고
    • W. Göpel, J. Hesse, and J. N. Zemmel, Editors, VCH, Weinheim
    • Sensors. A Comprehensive Survey in Eight Volumes, Vol. 2, W. Göpel, J. Hesse, and J. N. Zemmel, Editors, VCH, Weinheim (1989).
    • (1989) Sensors. A Comprehensive Survey in Eight Volumes , vol.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.