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Volumn 143, Issue 2, 1996, Pages 683-687
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Deposition of tin oxide into porous silicon by atomic layer epitaxy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
CHEMISORPTION;
COMPOSITION;
DEPOSITION;
DIFFUSION;
ELLIPSOMETRY;
EPITAXIAL GROWTH;
POROSITY;
POROUS SILICON;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
TRANSMISSION ELECTRON MICROSCOPY;
ATOMIC LAYER EPITAXY;
CONFORMAL COATING;
ELECTRON PROBE ANALYSIS;
FORMATION MECHANISM;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
PORES;
SEMICONDUCTING TIN COMPOUNDS;
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EID: 0030086051
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1836500 Document Type: Article |
Times cited : (69)
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References (21)
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