-
1
-
-
0015127532
-
BMemristorVThe missing circuit element
-
L. O. Chua, BMemristorVThe missing circuit element, IEEE Trans. Circuit Theory, vol.CT-18, pp. 507-519, 1971.
-
(1971)
IEEE Trans. Circuit Theory
, vol.CT-18
, pp. 507-519
-
-
Chua, L.O.1
-
2
-
-
0016918810
-
BMemrisive devices and systems
-
L. O. Chua and S. M. Kang, BMemrisive devices and systems, Proc. IEEE, vol.64, pp. 209-223, 1976.
-
(1976)
Proc. IEEE
, vol.64
, pp. 209-223
-
-
Chua, L.O.1
Kang, S.M.2
-
3
-
-
84938019400
-
BTheory and application of self-heated thermistors
-
M. Sapoff and R. M. Oppenheim, BTheory and application of self-heated thermistors, Proc. IEEE, vol.51, pp. 1292-1305, 1963.
-
(1963)
Proc. IEEE
, vol.51
, pp. 1292-1305
-
-
Sapoff, M.1
Oppenheim, R.M.2
-
4
-
-
0037392525
-
BNanoscale molecular-switch crossbar circuits
-
Y. Chen, G. Y. Jung, D. A. A. Ohlberg, X. M. Li, D. R. Stewart, J. O. Jeppesen, K. A. Nielsen, J. F. Stoddart, and R. S. Williams, BNanoscale molecular-switch crossbar circuits, Nanotechnology, vol.14, pp. 462-468, 2003.
-
(2003)
Nanotechnology
, vol.14
, pp. 462-468
-
-
Chen, Y.1
Jung, G.Y.2
Ohlberg, D.A.A.3
Li, X.M.4
Stewart, D.R.5
Jeppesen, J.O.6
Nielsen, K.A.7
Stoddart, J.F.8
Williams, R.S.9
-
5
-
-
53849108825
-
BSpin memristive systems: Spin memory effects in semiconductor spintronics
-
Y. V. Pershin and M. Di Ventra, BSpin memristive systems: Spin memory effects in semiconductor spintronics, Phys. Rev. B, Condens. Matter, vol.78, pp. 113309/1-113309/4, 2008.
-
(2008)
Phys. Rev. B, Condens. Matter
, vol.78
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
6
-
-
40949089803
-
BCurrent-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime
-
Y. V. Pershin and M. Di Ventra, BCurrent-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime, Phys. Rev. B, Condens. Matter, vol.77, pp. 073301/1-073301/4, 2008.
-
(2008)
Phys. Rev. B, Condens. Matter
, vol.77
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
7
-
-
43049126833
-
BThe missing memristor found
-
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, BThe missing memristor found, Nature (London), vol.453, pp. 80-83, 2008.
-
(2008)
Nature (London)
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
8
-
-
46749093701
-
BMemristive switching mechanism for metal/oxide/metal nanodevices
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, BMemristive switching mechanism for metal/oxide/metal nanodevices, Nature Nanotechnol., vol.3, pp. 429-433, 2008.
-
(2008)
Nature Nanotechnol
, vol.3
, pp. 429-433
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
9
-
-
68249109103
-
BPhase-transition driven memristive system
-
T. Driscoll, H.-T. Kim, B.-G. Chae, M. Di Ventra, and D. N. Basov, BPhase-transition driven memristive system, Appl. Phys. Lett., vol.95, pp. 043503/1-043503/3, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.95
-
-
Driscoll, T.1
Kim, H.-T.2
Chae, B.-G.3
Di Ventra, M.4
Basov, D.N.5
-
11
-
-
70249115683
-
-
Phys. Rev. E, vol.80, pp. 021926/1-021926/6, 2009.
-
(2009)
Phys. Rev. e
, vol.80
-
-
-
13
-
-
21244443854
-
BNonlinear circuit foundations for nanodevices, Part I: The four-element torus
-
L. O. Chua, BNonlinear circuit foundations for nanodevices, Part I: The four-element torus, Proc. IEEE, vol.91, pp. 1830-1859, 2003.
-
(2003)
Proc. IEEE
, vol.91
, pp. 1830-1859
-
-
Chua, L.O.1
-
14
-
-
0019080376
-
BDynamic nonlinear networks: State-of-the-art
-
L. O. Chua, BDynamic nonlinear networks: State-of-the-art, IEEE Trans. Circuits Syst., vol.CAS-11, pp. 1059-1087, 1980.
-
(1980)
IEEE Trans. Circuits Syst.
, vol.CAS-11
, pp. 1059-1087
-
-
Chua, L.O.1
-
16
-
-
0000216412
-
BSpatial variation of currents and fields due to localized scatterers in metallic conduction
-
R. Landauer, BSpatial variation of currents and fields due to localized scatterers in metallic conduction, IBM J. Res. Develop., vol.1, pp. 223-231, 1957.
-
(1957)
IBM J. Res. Develop
, vol.1
, pp. 223-231
-
-
Landauer, R.1
-
17
-
-
33947190900
-
BMicroscopic current dynamics in nanoscale junctions
-
N. Sai, N. Bushong, R. Hatcher, and M. Di Ventra, BMicroscopic current dynamics in nanoscale junctions, Phys. Rev. B Condens. Matter, vol.75, pp. 115410/1-115410/8, 2007.
-
(2007)
Phys. Rev. B Condens. Matter
, vol.75
-
-
Sai, N.1
Bushong, N.2
Hatcher, R.3
Di Ventra, M.4
-
18
-
-
66349101901
-
BFrequency doubling and memory effects in the spin hall effect
-
Y. V. Pershin and M. Di Ventra, BFrequency doubling and memory effects in the spin hall effect, Phys. Rev. B, Condens. Matter, vol.79, pp. 153307/1-153307/4, 2009.
-
(2009)
Phys. Rev. B, Condens. Matter
, vol.79
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
19
-
-
0029273555
-
BBorder traps: Issues for MOS radiation response and long-term reliability
-
D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur, BBorder traps: Issues for MOS radiation response and long-term reliability, Microelectr. Reliab., vol.35, pp. 403-428, 1995.
-
(1995)
Microelectr. Reliab
, vol.35
, pp. 403-428
-
-
Fleetwood, D.M.1
Shaneyfelt, M.R.2
Warren, W.L.3
Schwank, J.R.4
Meisenheimer, T.L.5
Winokur, P.S.6
-
20
-
-
0000020095
-
BUltralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition
-
Y. Kim, K. H. Park, T. H. Chung, H. J. Bark, J.-Y. Yi, W. C. Choi, E. K. Kim, J. W. Lee, and J. Y. Lee, BUltralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition, Appl. Phys. Lett., vol.78, pp. 934-936, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 934-936
-
-
Kim, Y.1
Park, K.H.2
Chung, T.H.3
Bark, H.J.4
Yi, J.-Y.5
Choi, W.C.6
Kim, E.K.7
Lee, J.W.8
Lee, J.Y.9
-
21
-
-
33144463587
-
BMemory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric
-
P. F. Lee, X. B. Lu, J. Y. Dai, H. L. W. Chan, E. Jelenkovic, and K. Y. Tong, BMemory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric, Nanotechnology, vol.17, pp. 1202-1206, 2006.
-
(2006)
Nanotechnology
, vol.17
, pp. 1202-1206
-
-
Lee, P.F.1
Lu, X.B.2
Dai, J.Y.3
Chan, H.L.W.4
Jelenkovic, E.5
Tong, K.Y.6
-
22
-
-
0033349103
-
BAnalysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch
-
T. Matsuo, K. Okumura, and A. Kishima, BAnalysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch, Proc. Inst. Elect. Eng. Circuits Develop. Syst., vol.146, pp. 176-183, 1999.
-
(1999)
Proc. Inst. Elect. Eng. Circuits Develop. Syst.
, vol.146
, pp. 176-183
-
-
Matsuo, T.1
Okumura, K.2
Kishima, A.3
-
23
-
-
57349177582
-
BResonant excitations of single and two-qubit systems coupled to a tank circuit
-
S. N. Shevchenko, S. H. W. van der Ploeg, M. Grajcar, E. Il'ichev, A. N. Omelyanchouk, and H.-G. Meyer, BResonant excitations of single and two-qubit systems coupled to a tank circuit, Phys. Rev. B, vol.78, pp. 174527/1-174527/11, 2008.
-
(2008)
Phys. Rev. B
, vol.78
-
-
Shevchenko, S.N.1
Van Der Ploeg, S.H.W.2
Grajcar, M.3
Il'Ichev, E.4
Omelyanchouk, A.N.5
Meyer, H.-G.6
-
24
-
-
34247553718
-
BSpin blockade at semiconductor/ferromagnet junctions
-
Y. V. Pershin and M. Di Ventra, BSpin blockade at semiconductor/ ferromagnet junctions, Phys. Rev. B, Condens. Matter, vol.75, pp. 193301/1-193301/4, 2007.
-
(2007)
Phys. Rev. B, Condens. Matter
, vol.75
-
-
Pershin, Y.V.1
Di Ventra, M.2
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