Atomic layer deposition of thin hafnium oxide films using a carbon free precursor

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 712-718

  Conley Jr , J F ^a   Ono, Y ^a   Tweet, D J ^a   Zhuang, W ^a   Solanki, R ^b  

^a SHARP LABORATORIES OF AMERICA   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; CRYSTALLIZATION; ELLIPSOMETRY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; VOLTAGE MEASUREMENT; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 0037250244     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528306     Document Type: Article

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