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Volumn 148, Issue 12, 2001, Pages

Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000127529     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1418379     Document Type: Article
Times cited : (53)

References (39)
  • 13
    • 0001716170 scopus 로고    scopus 로고
    • M. Houssa, A. Stesmans, M. Naili, and M. M. Heyns, Appl. Phys. Lett., 77, 1381 (2000); M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys., 87, 8615 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 1381
    • Houssa, M.1    Stesmans, A.2    Naili, M.3    Heyns, M.M.4
  • 22
    • 1542631321 scopus 로고    scopus 로고
    • Joint Committee of Powder Diffraction Standards, JCPDS-ICDD file 27-0997
    • Joint Committee of Powder Diffraction Standards, JCPDS-ICDD file 27-0997.
  • 23
    • 1542526397 scopus 로고    scopus 로고
    • Joint Committee of Powder Diffraction Standards, JCPDS-ICDD file 17-0923
    • Joint Committee of Powder Diffraction Standards, JCPDS-ICDD file 17-0923.
  • 24
    • 1542631317 scopus 로고    scopus 로고
    • Joint Committee of Powder Diffraction Standards, JCPDS ICDD file 13-0307
    • Joint Committee of Powder Diffraction Standards, JCPDS ICDD file 13-0307.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.