Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4878-4889

  Puurunen, Riikka L ^a,b   Vandervorst, Wilfried ^a,b   Besling, Wim F A ^c   Richard, Olivier ^a   Bender, Hugo ^a   Conard, Thierry ^a   Zhao, Chao ^a   Delabie, Annelies ^a   Caymax, Matty ^a   De Gendt, Stefan ^a   Heyns, Marc ^a   Viitanen, Minna M ^d   De Ridder, Marco ^e   Brongersma, Hidde H ^d   Tamminga, Yde ^e   Dao, Thuy ^e   De Win, Toon ^e   Verheijen, Marcel ^e   Kaiser, Monja ^e   Tuominen, Marko ^f,g  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NXP SEMICONDUCTORS   (Netherlands)

^d Calipso BV   (Netherlands)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

^f ASM BELGIUM   (Belgium)

^g ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; GROWTH (MATERIALS); HYDROGEN; MATHEMATICAL MODELS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MATERIAL LAYERS; NANOMETER; OPTICAL EMISSION SPECTROSCOPY; OXIDE FILMS;

ZIRCONIA;

EID: 9744227161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787624     Document Type: Article

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