메뉴 건너뛰기




Volumn 3, Issue 2, 1998, Pages 147-152

Atomic layer epitaxy

Author keywords

ALE atomic layer epitaxy; ECALE electrochemical atomic layer epitaxy; SILAR successive ionic layer adsorption and reaction; TFEL thin film electroluminescence; YBCO YBa2Cu3O7 x

Indexed keywords


EID: 0001027439     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(98)80080-6     Document Type: Article
Times cited : (75)

References (62)
  • 1
    • 0000300191 scopus 로고
    • Atomic layer epitaxy
    • Hurle D.T.J. Amsterdam: Elsevier
    • Suntola T. Atomic layer epitaxy. Hurle DTJ. Handbook of Crystal Growth. 3:1994;601-663 Elsevier, Amsterdam.
    • (1994) Handbook of Crystal Growth , vol.3 , pp. 601-663
    • Suntola, T.1
  • 2
    • 0007637523 scopus 로고
    • Atomic layer epitaxy
    • D.A. Glocker, Shah S.I. Bristol: IOP Publishing. Ch.B.1.5
    • Suntola T. Atomic layer epitaxy. Glocker DA, Shah SI. Handbook of Thin Film Process Technology. 1995;1-17 IOP Publishing, Bristol. Ch.B.1.5.
    • (1995) Handbook of Thin Film Process Technology , pp. 1-17
    • Suntola, T.1
  • 3
    • 0041822817 scopus 로고    scopus 로고
    • Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications
    • This review contains 61 references of oxide synthesis by ALE: the literature is cited until 1995/96.
    • Niinistö L, Ritala M, Leskelä M. Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications. Mater Sci Eng B. 41:1996;23-29 This review contains 61 references of oxide synthesis by ALE: the literature is cited until 1995/96.
    • (1996) Mater Sci Eng B , vol.41 , pp. 23-29
    • Niinistö, L.1    Ritala, M.2    Leskelä, M.3
  • 5
    • 0039838378 scopus 로고    scopus 로고
    • The successive ionic layer adsorption and reaction (SILAR) growth and characterization of ZnS and ZnS:Mn thin films
    • Helsinki: University of Helsinki
    • Lindroos S. The successive ionic layer adsorption and reaction (SILAR) growth and characterization of ZnS and ZnS:Mn thin films. [Phd Thesis]. 1997;University of Helsinki, Helsinki.
    • (1997) [Phd Thesis]
    • Lindroos, S.1
  • 6
    • 0030566192 scopus 로고    scopus 로고
    • Formation of the first monolayer of CdSe on Au (111) by electrochemical ALE
    • Lister TE. Formation of the first monolayer of CdSe on Au (111) by electrochemical ALE. Appl Surf Sci. 107:1996;153-160.
    • (1996) Appl Surf Sci , vol.107 , pp. 153-160
    • Lister, T.E.1
  • 7
    • 0001327131 scopus 로고    scopus 로고
    • Volatile metal β-diketonates. ALE and CVD precursors for electroluminescent device thin films
    • Tiitta M, Niinistö L. Volatile metal β-diketonates. ALE and CVD precursors for electroluminescent device thin films. Chem Vap Deposition. 3:1997;167-182.
    • (1997) Chem Vap Deposition , vol.3 , pp. 167-182
    • Tiitta, M.1    Niinistö, L.2
  • 8
    • 0030197829 scopus 로고    scopus 로고
    • Potential cerium precursors for blue color in thin film electroluminescent devices growth by atomic layer epitaxy
    • Leskelä T, Vasama K, Härkönen G, Sarkio P, Lounasmaa M. Potential cerium precursors for blue color in thin film electroluminescent devices growth by atomic layer epitaxy. Adv Mater Opt Electron. 6:1996;169-174.
    • (1996) Adv Mater Opt Electron , vol.6 , pp. 169-174
    • Leskelä, T.1    Vasama, K.2    Härkönen, G.3    Sarkio, P.4    Lounasmaa, M.5
  • 11
    • 0030107544 scopus 로고    scopus 로고
    • Atomic layer epitaxy of strontium sulfide thin films using in situ synthesized strontium precursors
    • Many of the problems encountered with β-diketonate-type precursors of alkaline earth metals can be avoided by using this novel method of precursor synthesis.
    • Soininen P, Nykänen E, Niinistö L, Leskelä T. Atomic layer epitaxy of strontium sulfide thin films using in situ synthesized strontium precursors. Chem Vap Deposition. 2:1996;69-74 Many of the problems encountered with β-diketonate-type precursors of alkaline earth metals can be avoided by using this novel method of precursor synthesis.
    • (1996) Chem Vap Deposition , vol.2 , pp. 69-74
    • Soininen, P.1    Nykänen, E.2    Niinistö, L.3    Leskelä, T.4
  • 13
    • 0002450373 scopus 로고
    • Evolved gas analysis of inorganic compounds with a quadrupole mass spectrometer coupled to a thermogravimetric analyzer
    • Leskelä T, Lippmaa M, Niinistö L, Soininen P. Evolved gas analysis of inorganic compounds with a quadrupole mass spectrometer coupled to a thermogravimetric analyzer. Thermochim Acta. 214:1993;9-18.
    • (1993) Thermochim Acta , vol.214 , pp. 9-18
    • Leskelä, T.1    Lippmaa, M.2    Niinistö, L.3    Soininen, P.4
  • 14
    • 0039246561 scopus 로고    scopus 로고
    • A study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods
    • T. Nishinaga, K. Nishioka, J. Harada, A. Sasaki, Takei H. Elsevier Amsterdam, The paper discusses, in relation to GaAs growth, the use of two in situ monitoring methods: gravimetry using a microbalance and an optical method by SPA
    • Koukitu A. A study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods. Nishinaga T, Nishioka K, Harada J, Sasaki A, Takei H. Advances in the Understanding of Crystal Growth Mechanisms. 1997;131-147 Elsevier, Amsterdam, The paper discusses, in relation to GaAs growth, the use of two in situ monitoring methods: gravimetry using a microbalance and an optical method by SPA.
    • (1997) Advances in the Understanding of Crystal Growth Mechanisms , pp. 131-147
    • Koukitu, A.1
  • 16
    • 0041025052 scopus 로고    scopus 로고
    • Surface dynamics studied using reflectance anisotropy
    • Roberts M. Oxford: Blackwell Science
    • Pemble ME. Surface dynamics studied using reflectance anisotropy. Roberts M. Interfacial Science. 1997;217-235 Blackwell Science, Oxford.
    • (1997) Interfacial Science , pp. 217-235
    • Pemble, M.E.1
  • 17
    • 0001863750 scopus 로고
    • In situ monitoring and control of atomic layer epitaxy by surface photo-absorption
    • Kobayashi N, Kobayashi Y. In situ monitoring and control of atomic layer epitaxy by surface photo-absorption. Thin Solid Films. 225:1993;32-39.
    • (1993) Thin Solid Films , vol.225 , pp. 32-39
    • Kobayashi, N.1    Kobayashi, Y.2
  • 18
    • 0031546925 scopus 로고    scopus 로고
    • In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy
    • Koukitu A, Tetsuya T. In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy. Appl Surf Sci. 112:1997;63-68.
    • (1997) Appl Surf Sci , vol.112 , pp. 63-68
    • Koukitu, A.1    Tetsuya, T.2
  • 19
    • 0030566290 scopus 로고    scopus 로고
    • Monitoring of atomic layer deposition by incremental dielectric reflection
    • Rosental A, Adamson P, Gerst A, Niilisk A. Monitoring of atomic layer deposition by incremental dielectric reflection. Appl Surf Sci. 107:1996;178-183.
    • (1996) Appl Surf Sci , vol.107 , pp. 178-183
    • Rosental, A.1    Adamson, P.2    Gerst, A.3    Niilisk, A.4
  • 20
    • 0031547030 scopus 로고    scopus 로고
    • Atomic layer deposition in traveling-wave reactor: In situ diagnostic by optical reflection
    • Rosental A, Adamson P, Gerst A, Koppel H, Tarre A. Atomic layer deposition in traveling-wave reactor: in situ diagnostic by optical reflection. Appl Surf Sci. 112:1997;82-86.
    • (1997) Appl Surf Sci , vol.112 , pp. 82-86
    • Rosental, A.1    Adamson, P.2    Gerst, A.3    Koppel, H.4    Tarre, A.5
  • 21
    • 0000307569 scopus 로고    scopus 로고
    • Optical approaches to determine near-surface compositions during epitaxy
    • Aspnes DE. Optical approaches to determine near-surface compositions during epitaxy. J Vac Sci Technol A. 14:1996;960-966.
    • (1996) J Vac Sci Technol a , vol.14 , pp. 960-966
    • Aspnes, D.E.1
  • 22
    • 3843049021 scopus 로고    scopus 로고
    • Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy
    • Arès R, Tran CA, Watkins SP. Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy. Can J Phys (Suppl). 74:1996;S85-S88.
    • (1996) Can J Phys (Suppl) , vol.74
    • Arès, R.1    Tran, C.A.2    Watkins, S.P.3
  • 23
    • 0031546822 scopus 로고    scopus 로고
    • Molecular layer epitaxy by real-time optical process monitoring
    • The use of various optical process monitoring and control methods are considered in the context of ALE and a detailed discussion is given in the case of p-polarised reflectance.
    • Bachmann KJ, Höpfner C, Sukidi N, Miller AE, Harris C, Aspnes DE, Dietz NA, Tran HT, Beeler S, Ito K, et al. Molecular layer epitaxy by real-time optical process monitoring. Appl Surf Sci. 112:1997;38-47 The use of various optical process monitoring and control methods are considered in the context of ALE and a detailed discussion is given in the case of p-polarised reflectance.
    • (1997) Appl Surf Sci , vol.112 , pp. 38-47
    • Bachmann, K.J.1    Höpfner, C.2    Sukidi, N.3    Miller, A.E.4    Harris, C.5    Aspnes, D.E.6    Dietz, N.A.7    Tran, H.T.8    Beeler, S.9    Ito, K.10
  • 27
    • 0031546857 scopus 로고    scopus 로고
    • Modelling of germanium atomic-layer-epitaxy
    • An illustrative example of the use of both kinetic and thermodynamic data to predict whether an ideal and spontaneous ALE process is possible.
    • Sugahara S, Matsumura M. Modelling of germanium atomic-layer-epitaxy. Appl Surf Sci. 112:1997;176-186 An illustrative example of the use of both kinetic and thermodynamic data to predict whether an ideal and spontaneous ALE process is possible.
    • (1997) Appl Surf Sci , vol.112 , pp. 176-186
    • Sugahara, S.1    Matsumura, M.2
  • 29
    • 0030218562 scopus 로고    scopus 로고
    • Surface chemistry for atomic layer growth
    • 3, GaAs are used to illustrate the mechanisms.
    • 3, GaAs are used to illustrate the mechanisms.
    • (1996) J Phys Chem , vol.100 , pp. 13121-13131
    • George, S.M.1    Ott, A.W.2    Klaus, J.W.3
  • 32
    • 0000913015 scopus 로고    scopus 로고
    • Surface characteristics and activity of chromia/alumina catalysts prepared by atomic layer epitaxy
    • Kytökivi A, Jacobs J-P, Hakuli A, Meriläinen J, Brongersma HH. Surface characteristics and activity of chromia/alumina catalysts prepared by atomic layer epitaxy. J Catal. 163:1996;190-197.
    • (1996) J Catal , vol.163 , pp. 190-197
    • Kytökivi, A.1    Jacobs J-P2    Hakuli, A.3    Meriläinen, J.4    Brongersma, H.H.5
  • 34
    • 0031546852 scopus 로고    scopus 로고
    • Atomic layer deposition of ZnO transparent conducting oxides
    • Yamada A, Sang B, Konagai M. Atomic layer deposition of ZnO transparent conducting oxides. Appl Surf Sci. 112:1997;216-222.
    • (1997) Appl Surf Sci , vol.112 , pp. 216-222
    • Yamada, A.1    Sang, B.2    Konagai, M.3
  • 35
    • 0030149010 scopus 로고    scopus 로고
    • Growth of transparent conductive oxide ZnO films by atomic layer deposition
    • Sang B, Konagai M. Growth of transparent conductive oxide ZnO films by atomic layer deposition. Jpn J Appl Phys Part 2. 35:1996;L602-605.
    • (1996) Jpn J Appl Phys Part 2 , vol.35 , pp. 602-605
    • Sang, B.1    Konagai, M.2
  • 36
    • 85033891465 scopus 로고    scopus 로고
    • Comparison of ZnO films deposited by spray pyrolysis and atomic layer epitaxy
    • [Chem Abstr 127:111531.]
    • van Heerden JL, Swanepoel R. Comparison of ZnO films deposited by spray pyrolysis and atomic layer epitaxy. Proc-Microsc Soc South Afr. 26:1996;33. [Chem Abstr 127:111531.].
    • (1996) Proc-Microsc Soc South Afr , vol.26 , pp. 33
    • Van Heerden, J.L.1    Swanepoel, R.2
  • 37
    • 0030107214 scopus 로고    scopus 로고
    • 2-II thin films
    • This is an example of thin film ALE growth of a material under conditions where it should not be thermodynamically stable. The possible reasons for this are discussed in [38].
    • 2-II thin films. Phil Mag Lett. 73:1996;115-119 This is an example of thin film ALE growth of a material under conditions where it should not be thermodynamically stable. The possible reasons for this are discussed in [38].
    • (1996) Phil Mag Lett , vol.73 , pp. 115-119
    • Aarik, J.1    Aidla, A.2    Uustare, T.3
  • 39
    • 0031546895 scopus 로고    scopus 로고
    • Advanced ALE processes of amorphous and polycrystalline films
    • Ritala M. Advanced ALE processes of amorphous and polycrystalline films. Appl Surf Sci. 112:1997;223-230.
    • (1997) Appl Surf Sci , vol.112 , pp. 223-230
    • Ritala, M.1
  • 41
    • 0040431049 scopus 로고    scopus 로고
    • Surface models for the adsorption of a calcium β-diketonate complex on calcium sulfide
    • Calhorda MJ, Veiros LF, Niinistö L. Surface models for the adsorption of a calcium β-diketonate complex on calcium sulfide. Acta Chem Scand. 50:1996;862-870.
    • (1996) Acta Chem Scand , vol.50 , pp. 862-870
    • Calhorda, M.J.1    Veiros, L.F.2    Niinistö, L.3
  • 46
    • 0010389525 scopus 로고    scopus 로고
    • Present status of inorganic full-colour EL displays
    • R.H. Manch, Gumlich H-E Berlin: Wissenschaft & Technik Verlag
    • Ono YA. Present status of inorganic full-colour EL displays. Manch RH, Gumlich H-E. Inorganic and Organic Electroluminescence. 1996;273-278 Wissenschaft & Technik Verlag, Berlin.
    • (1996) Inorganic and Organic Electroluminescence , pp. 273-278
    • Ono, Y.A.1
  • 47
    • 85033872985 scopus 로고    scopus 로고
    • Colour-by-white EL displays
    • R.H. Manch, Gumlich H-E Berlin: Wissenschaft & Technik Verlag
    • Törnqvist R. Colour-by-white EL displays. Manch RH, Gumlich H-E. Inorganic and Organic Electroluminescence. 1996;278-284 Wissenschaft & Technik Verlag, Berlin.
    • (1996) Inorganic and Organic Electroluminescence , pp. 278-284
    • Törnqvist, R.1
  • 48
    • 0030355596 scopus 로고    scopus 로고
    • Quantification of antimony depth profiles in Sb-doped tin dioxide thin films
    • Lehto S, Lappalainen R, Viirola H, Niinistö L. Quantification of antimony depth profiles in Sb-doped tin dioxide thin films. Fresenius J Anal Chem. 355:1996;129-134.
    • (1996) Fresenius J Anal Chem , vol.355 , pp. 129-134
    • Lehto, S.1    Lappalainen, R.2    Viirola, H.3    Niinistö, L.4
  • 51
    • 3743147318 scopus 로고    scopus 로고
    • 4 vapor with porous silica and γ-alumina surfaces
    • 4 vapor with porous silica and γ-alumina surfaces. Langmuir. 12:1996;4395-4403.
    • (1996) Langmuir , vol.12 , pp. 4395-4403
    • Kytökivi, A.1    Lakomaa E-L2    Root, A.3
  • 53
    • 0030086051 scopus 로고    scopus 로고
    • Deposition of tin oxide into porous silicon by atomic layer epitaxy
    • Coating of pores in porous silicon opens up new applications for ALE and sensors based on porous silicon
    • Dücsö Cs, Khanh NQ, Horváth Z, Bársony I, Utriainen M, Lehto S, Nieminen M, Niinistö L. Deposition of tin oxide into porous silicon by atomic layer epitaxy. J Electrochem Soc. 143:1996;683-687 Coating of pores in porous silicon opens up new applications for ALE and sensors based on porous silicon.
    • (1996) J Electrochem Soc , vol.143 , pp. 683-687
    • Dücsö Cs1    Khanh, N.Q.2    Horváth, Z.3    Bársony, I.4    Utriainen, M.5    Lehto, S.6    Nieminen, M.7    Niinistö, L.8
  • 55
    • 0039246549 scopus 로고    scopus 로고
    • Metalorganic molecular beam epitaxy and atomic layer epitaxy of GaAs
    • One of the few reviews in which ALE is compared to another deposition method in detail.
    • Abernathy CR. Metalorganic molecular beam epitaxy and atomic layer epitaxy of GaAs. EMIS Datarev Ser. 16:1996;663-671 One of the few reviews in which ALE is compared to another deposition method in detail.
    • (1996) EMIS Datarev Ser , vol.16 , pp. 663-671
    • Abernathy, C.R.1
  • 57
    • 0031546926 scopus 로고    scopus 로고
    • n short-period superlattice fabricated by atomic layer epitaxy
    • n short-period superlattice fabricated by atomic layer epitaxy. Appl Surf Sci. 112:1997;122-126.
    • (1997) Appl Surf Sci , vol.112 , pp. 122-126
    • Isshiki, H.1    Aoyagi, Y.2    Sugano, T.3
  • 58
    • 0005297910 scopus 로고
    • Atomic layer epitaxy
    • D. Bloor, R.S. Brook, M.C. Flemings, Mahajan S. Oxford: Pergamon
    • Bedair SM. Atomic layer epitaxy. Bloor D, Brook RS, Flemings MC, Mahajan S. The Encyclopedia of Advanced Materials. 1:1994;141-153 Pergamon, Oxford.
    • (1994) The Encyclopedia of Advanced Materials , vol.1 , pp. 141-153
    • Bedair, S.M.1
  • 59
    • 0030564312 scopus 로고    scopus 로고
    • Surface chemistry of materials deposition at atomic layer level
    • Suntola T. Surface chemistry of materials deposition at atomic layer level. Appl Surf Sci. 100/101:1996;391-398.
    • (1996) Appl Surf Sci , vol.100-101 , pp. 391-398
    • Suntola, T.1
  • 60
    • 0031233751 scopus 로고    scopus 로고
    • Atomic layer epitaxy of AIP and its application to X-ray multilayer mirror
    • X-ray mirror fabrication is one of the most exiting potential applications of ALE. This paper gives first detailed account showing that it is possible and furthermore reports on the deposition of AIP for the first time.
    • Ishii M, Iwai S, Kawata H, Ueki T, Aoyagi Y. Atomic layer epitaxy of AIP and its application to X-ray multilayer mirror. J Cryst Growth. 180:1997;15-21 X-ray mirror fabrication is one of the most exiting potential applications of ALE. This paper gives first detailed account showing that it is possible and furthermore reports on the deposition of AIP for the first time.
    • (1997) J Cryst Growth , vol.180 , pp. 15-21
    • Ishii, M.1    Iwai, S.2    Kawata, H.3    Ueki, T.4    Aoyagi, Y.5
  • 62
    • 0000544108 scopus 로고    scopus 로고
    • Titanium oxide/aluminum oxide multilayer reflectors for "water-window" wavelengths
    • Kumagai H, Toyoda K, Kobayashi K, Obara M, Iimura Y. Titanium oxide/aluminum oxide multilayer reflectors for "water-window" wavelengths. Appl Phys Lett. 70:1997;2338-2340.
    • (1997) Appl Phys Lett , vol.70 , pp. 2338-2340
    • Kumagai, H.1    Toyoda, K.2    Kobayashi, K.3    Obara, M.4    Iimura, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.