Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applications

Journal of the Electrochemical Society

Volumn 155, Issue 2, 2008, Pages

  Lee, Seunghyup ^a   Kim, Wan Gee ^a   Rhee, Shi Woo ^a,b   Yong, Kijung ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HAFNIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONVOLATILE STORAGE; SWITCHING;

FORMING PROCESS; OHMIC CONDUCTION MECHANISM; RESISTANCE SWITCHING; SCHOTTKY EMISSION;

OXIDE FILMS;

EID: 37549002104     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2814153     Document Type: Article

References (24)

1. S. R. Ovshinsky, Phys. Rev. Lett., 21, 1450 (1968).
2. P. E. Schmidt, C. Dávila, P. Esqueda, and R. Callarotti, J. Solid State Chem., 12, 293 (1975).
3. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys., 98, 033715 (2005).
4. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys., 33, 1129 (1970).
5. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett., 85, 5655 (2004).
6. H. Sim, D. Choi, D. Lee, M. Hasan, C. B. Samantaray, and H. Hwang, Microelectron. Eng., 80, 260 (2005).
7. W. R. Hiatt and T. W. Hickmott, Appl. Phys. Lett., 6, 106 (1965).
8. T. W. Hickmott and W. R. Hiatt, Solid-State Electron., 13, 1033 (1970).
9. K. L. Chopra, J. Appl. Phys., 36, 184 (1965).
10. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M. J. Lee, S. A. Seo, and I. K. Yoo, IEEE Electron Device Lett., 26, 719 (2005).
11. J. W. Park, K. Jung, M. K. Yang, J. K. Lee, D. Y. Kim, and J. W. Park, J. Appl. Phys., 99, 124102 (2006).
12. J. Schaeffer, N. V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, J. Electrochem. Soc., 150, F67 (2003).
13. H.-Y. Lee, P.-S. Chen, C.-C. Wang, S. Malkap, P.-J. Tzeng, C.-H. Lin, L.-S. Lee, and M.-J. Tsai, Jpn. J. Appl. Phys., Part 1, 46, 2175 (2007).
14. I. S. Park, K. R. Kim, S. Lee, and J. Ahn, Jpn. J. Appl. Phys., Part 1, 46, 2172 (2007).
15. Y. Ohshita, A. Ogura, A. Hoshino, S. Hiiro, T. Suzuki, and H. Machida, Thin Solid Films, 406, 215 (2002).
16. K. Tsunoda, Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffing, and Y. Nishi, Appl. Phys. Lett., 90, 113501 (2007).
17. J. W. Park, J.-W. Park, and J. K. Lee, J. Korean Phys. Soc., 49, S447 (2006).
18. J. W. Park, J.-W. Park, D. Y. Kim, and J. K. Lee, J. Vac. Sci. Technol. B, 23, 1309 (2005).
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York (1981).
20. D. S. Jeong, H. Schroeder, and R. Waser, Electrochem. Solid-State Lett., 10, G51 (2007).
21. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, T.-C. Lee, F.-L. Yang, C. Hu, and T.-Y. Tseng, IEEE Electron Device Lett., 28, 366 (2007).
22. G. V. Samsonov, The Oxide Handbook, IFI/Plenum, New York (1973).
23. C. Kittel, Introduction to Solid State Physics, Wiley, New York (2004).
24. A. R. Newmark and U. Stimming, Langmuir, 3, 905 (1987).