Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors

Thin Solid Films

Volumn 443, Issue 1-2, 2003, Pages 1-4

  Hausmann, Dennis M ^a   De Rouffignac, Philippe ^a   Smith, Amethyst ^a   Gordon, Roy ^a   Monsma, Douwe ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Atomic layer deposition; Precursors; Tantalum oxide

Indexed keywords

CHEMICAL REACTORS; DEPOSITION; OXYGEN; PERMITTIVITY; STAINLESS STEEL; TANTALUM COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD);

THIN FILMS;

EID: 0141642128     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00502-9     Document Type: Article

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