Current and future challenges in radiation effects on CMOS electronics

IEEE Transactions on Nuclear Science

Volumn 57, Issue 4 PART 1, 2010, Pages 1747-1763

  Dodd, P E ^a   Shaneyfelt, M R ^a   Schwank, J R ^a   Felix, J A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Integrated circuit radiation effects; integrated circuit reliability; radiation effects; radiation effects technology trends; radiation hardening (electronics); radiation hardness assurance; radiation hardness assurance methodology; radiation hardness assurance testing; single event effects; single event functional interrupt; single event upset; soft errors; total ionizing dose effects

Indexed keywords

INTEGRATED CIRCUIT RADIATION EFFECTS; INTEGRATED CIRCUIT RELIABILITY; RADIATION HARDENING (ELECTRONICS); RADIATION HARDNESS ASSURANCE; RADIATION HARDNESS ASSURANCE METHODOLOGY; RADIATION HARDNESS ASSURANCE TESTING; SINGLE EVENT EFFECTS; SINGLE EVENT UPSETS; SINGLE-EVENTS; SOFT ERROR; TOTAL IONIZING DOSE EFFECTS;

CMOS INTEGRATED CIRCUITS; ERRORS; FLASH MEMORY; HARDENING; HARDNESS; HARDNESS TESTING; INTEGRATED CIRCUIT TESTING; INTEGRATED CIRCUITS; IONIZING RADIATION; MICROELECTRONICS; RADIATION HARDENING; TECHNOLOGY;

RADIATION EFFECTS;

EID: 77955783593     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2042613     Document Type: Conference Paper

References (133)

1. Top 500 Supercomputer Sites. [Online]. Available: http://www. top500.org
2. G. E. Moore, "Cramming more components onto integrated circuits," Electron., vol.38, no.8, pp. 114-117, Apr. 1965.
3. Moore's Law Intel Innovation [Online]. Available: http://www.intel. com/technology/mooreslaw/
4. International Technology Roadmap for Semiconductors. [Online]. Available: http://www.itrs.net
5. F. Faccio, "COTS for the LHC radiation environment: The rules of the game," in Proc. 6th Workshop Electronics for LHC, Sep. 2000, pp. 1-16, Experiments.
6. R. C. Lacoe, J. V. Osborn, D. C. Mayer, S. Brown, and D. R. Hunt, "Total-dose radiation tolerance of a commercial 0.35 μm CMOS process," in Proc. IEEE Radiation Effects Data Workshop, 1998, pp. 104-110.
7. M. R. Shaneyfelt, P. S. Winokur, T. L. Meisenheimer, F. W. Sexton, S. B. Roeske, and M. G. Knoll, "Hardness variability in commercial technologies," IEEE Trans. Nucl. Sci., vol.41, no.6, pp. 2536-2543, Dec. 1994.
8. J. A. Felix, P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Radiation response and variability of advanced commercial foundry technologies," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3187-3194, Dec. 2006.
9. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3278-3284, Dec. 2004.
10. R. C. Baumann, "Radiation-induced soft errors in advanced semiconductor technologies," IEEE Trans. Device Mater. Rel., vol.5, no.3, pp. 305-316, Sep. 2005.
11. P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Neutroninduced latchup in SRAMs at ground level," in Proc. IRPS, 2003, pp. 51-55.
12. L. Borucki, G. Schindlbeck, and C. Slayman, "Comparison of accelerated dram soft error rates measured at component and system level," in Proc. IRPS, 2008, pp. 482-487.
13. P. J. McWhorter, S. L.Miller, and W. M. Miller, "Modeling the anneal of radiation-induced trapped holes in a varying thermal environment," IEEE Trans. Nucl. Sci., vol.37, no.6, pp. 1682-1689, Dec. 1990.
14. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol.45, no.6, pp. 2584-2592, Dec. 1998.
15. F. T. Brady, J. D. Maimon, and M. J. Hurt, "Scaleable, radiation hardened shallow trench isolation," IEEE Trans. Nucl. Sci., vol.46, no.6, pp. 1836-1840, Dec. 1999.
16. W. L.Warren, J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, P. S. Winokur, W. P. Maszara, and L. B. McKitterick, "Radiation-induced defect centers in bonded and etchback SOI materials," Microelectron. Eng., vol.22, no.1-4, pp. 387-390, Aug. 1993.
17. S. T. Liu, W. C. Jenkins, and H. L. Hughes, "Total dose radiation hard 0.35 μm SOI CMOS technology," IEEE Trans. Nucl. Sci, vol.45, no.6, p. 2442, Dec. 1998.
18. J. R. Schwank, M. R. Shaneyfelt, B. L. Draper, and P. E. Dodd, "BUSFET-A radiation-hardened SOI transistor," IEEE Trans. Nucl. Sci., vol.46, no.6, pp. 1809-1816, Dec. 1999.
19. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, J. A. Burns, C. L. Keast, and P. W. Wyatt, "New insights into fully-depleted SOI rransistor response after total-dose irradiation," IEEE Trans. Nucl. Sci., vol.47, no.4, pp. 604-612, Jun. 2000.
20. F. T. Brady, H. L. Hughes, P. J. McMarr, and B. Mrstik, "Total dose hardening of SIMOX buried oxides for fully-depleted devices in rad-tolerant applications," IEEE Trans. Nucl. Sci., vol.43, no.6, pp. 2646-2650, Dec. 1996.
21. V. Ferlet-Cavrois, S. Quoizola, O. Musseau, O. Flament, and J. L. Leray, "Total dose latch in short channel NMOS/SOI transistors," IEEE Trans. Nucl. Sci., vol.45, no.6, pp. 2458-2466, Dec. 1998.
22. D. J. Cochran, S. P. Buchner, A. B. Sanders, K. A. LaBel, M. A. Carts, C. F. Poivey, T. R. Oldham, R. L. Ladbury, M. V. O'Bryan, and S. Mackey, "Compendium of recent total ionizing dose results for candidate spacecraft electronics for NASA," in Proc. IEEE Radiation Effects Data Workshop, 2008, pp. 5-10.
23. T. R. Oldham, M. R. Friendlich, A. B. Sanders, C. M. Seidleck, H. S. Kim, M. D. Berg, and K. A. LaBel, "TID and SEE response of advanced Samsung and Micron 4G NAND flash memories for the NASA MMS mission," in Proc. IEEE Radiation Effects Data Workshop, 2009, pp. 114-122.
24. T. R. Oldham and J. M. McGarrity, "Ionization of SiO by heavy charged particles," IEEE Trans. Nucl. Sci., vol.28, no.6, pp. 3975-3980, Dec. 1981.
25. R. Koga, W. R. Crain, K. B. Crawford, D. D. Lau, S. D. Pinkerton, B. K. Yi, and R. Chitty, "On the suitability of non-hardened high density SRAMs for space applications," IEEE Trans. Nucl. Sci., vol.38, no.6, pp. 1507-1513, Dec. 1991.
26. T. R. Oldham, K. W. Bennett, J. Beaucour, T. Carriere, C. Polvey, and P. Garnier, "Total dose failures in advanced electronics from single ions," IEEE Trans. Nucl. Sci., vol.40, no.6, pp. 1820-1830, Dec. 1993.
27. S. Duzellier, D. Falguere, and R. Ecoffet, "Protons and heavy ions induced stuck bits on large capacity RAMs," in Proc. 1993 Eur. Conf. Radiation Its Effects Components Systems (RADECS), 1994, pp. 468-472.
28. J.-G. Loquet, J.-P. David, R. Briand, and P. Fouillat, "Calculation of heavy ion induced leakage current in n-MOSFETs," IEEE Trans. Nucl. Sci., vol.47, no.6, pp. 2656-2661, Dec. 2000.
29. G. M. Swift, D. J. Padgett, and A. H. Johnston, "A new class of single event hard errors," IEEE Trans. Nucl. Sci., vol.41, no.6, pp. 2043-2048, Dec. 1994.
30. K. A. LaBel, M. M. Gates, A. K. Moran, H. S. Kim, C. M. Seidleck, P. Marshall, J. Kinnison, and B. Carkhuff, "Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs," IEEE Trans. Nucl. Sci., vol.43, no.6, pp. 2974-2981, Dec. 1996.
31. A. J. Fox, W. E. Abare, and A. Ross, "Suitability of COTS IBM 64M DRAM in space," in Proc. 1997 Eur. Conf. Radiation Its Effects Components Systems (RADECS), 1998, pp. 240-244.
32. H. Shindou, S. Kuboyama, N. Ikeda, T. Hirao, and S. Matsuda, "Bulk damage caused by single protons in SDRAMs," IEEE Trans. Nucl. Sci., vol.50, no.6, pp. 1839-1845, Dec. 2003.
33. L. D. Edmonds, S. M. Guertin, L. Z. Scheick, D. Nguyen, and G. M. Swift, "Ion-induced stuck bits in 1T/1C SDRAM cells," IEEE Trans. Nucl. Sci., vol.48, no.6, pp. 1925-1930, Dec. 2001.
34. L. D. Edmonds and L. Z. Scheick, "Physical mechanisms of ion-induced stuck bits in the Hyundai 16M × 4 SDRAM," IEEE Trans. Nucl. Sci., vol.55, no.6, pp. 3265-3271, Dec. 2008.
35. L. Scheick, S. Guertin, and D. Nguyen, "Investigation of the mechanism of stuck bits in high capacity SDRAMs," in Proc. IEEE Radiation Effects Data Workshop, 2008, pp. 47-52.
36. C. Dufour, P. Garnier, T. Carriere, J. Beaucour, R. Ecoffet, and M. Labrunee, "Heavy ion induced single hard errors on submicronic memories," IEEE Trans. Nucl. Sci., vol.39, no.6, pp. 1693-1697, Dec. 1992.
37. J. A. Felix, M. R. Shaneyfelt, J. R. Schwank, S. M. Dalton, P. E. Dodd, and J. B. Witcher, "Enhanced degradation in power MOSFET devices due to heavy ion irradiation," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2181-2189, Dec. 2007.
38. M. R. Shaneyfelt, J. A. Felix, P. E. Dodd, J. R. Schwank, S. M. Dalton, J. Baggio, V. Ferlet-Cavrois, P. Paillet, and E. W. Blackmore, "Enhanced proton and neutron induced degradation and its impact on hardness assurance testing," IEEE Trans. Nucl. Sci., vol.55, no.6, pp. 3096-3105, Dec. 2008.
39. R. C. Lacoe, "Improving integrated circuit performance through the application of hardness-by-design methodology," IEEE Trans. Nucl. Sci., vol.55, no.4, pp. 1903-1925, Aug. 2008.
40. M. Campbell, G. Anelli, M. Burns, E. Cantatore, L. Casagrande, M. Delmastro, R. Dinapoli, F. Faccio, E. Heijne, P. Jarron, M. Luptak, A. Marchioro, P. Martinengo, D. Minervini, M. Morel, E. Pernigotti, I. Ropotar, W. Snoeys, and K. Wyllie, "A pixel readout chip for 10-30 MRad in standard 0.25μm CMOS," IEEE Trans. Nucl. Sci., vol.46, no.3, pp. 156-160, Jun. 1999.
41. R. C. Lacoe, J. V. Osborn, R.Koga, S. Brown, and D. C. Mayer, "Application of hardness-by-design methodology to radiation-tolerant ASIC technologies," IEEE Trans. Nucl. Sci., vol.47, no.6, pp. 2334-2341, Dec. 2000.
42. F. Faccio, "Design hardening methodologies for ASICs," in Radiation Effects on Embedded Systems, R. Velazco, P. Fouillat, and R. Reis, Eds. New York: Springer-Verlag, 2007, pp. 143-160.
43. N. Nowlin, K. Bailey, T. Turfler, and D. Alexander, "A total-dose hardening- by-design approach for high-speed mixed-signal CMOS integrated circuits," Int. J. High-Speed Electron. Syst., vol.14, no.2, pp. 367-378, 2004.
44. J. Barak, J. Levinson, M. Victoria, and W. Hajdas, "Direct processes in the energy deposition of protons in silicon," IEEE Trans. Nucl. Sci., vol.43, no.6, pp. 2820-2826, Dec. 1996.
45. S. Duzellier, R. Ecoffet, D. Falguere, T. Nuns, L. Guibert, W. Hajdas, and M. C. Calvet, "Low energy proton induced SEE in memories," IEEE Trans. Nucl. Sci., vol.44, no.6, pp. 2306-2310, Dec. 1997.
46. P. W. Marshall, C. J. Dale, and K. A. LaBel, "Space radiation effects in high performance fiber optic data links for satellite data management," IEEE Trans. Nucl. Sci., vol.43, no.2, pp. 645-653, Dec. 1996.
47. G. R. Hopkinson, C. J. Dale, and P. W. Marshall, "Proton effects in charge-coupled devices," IEEE Trans. Nucl. Sci., vol.43, no.2, pp. 614-627, Dec. 1996.
48. D. F. Heidel, P. W. Marshall, K. A. Label, J. R. Schwank, K. P. Rodbell, M. C. Hakey, M. D. Berg, P. E. Dodd, M. R. Friendlich, A. D. Phan, C. M. Seidleck, M. R. Shaneyfelt, and M. A. Xapsos, "Low energy proton single-event-upset test results on 65 nm SOI SRAM," IEEE Trans. Nucl. Sci., vol.55, no.6, pp. 3394-3400, Dec. 2008.
49. D. F. Heidel, K. P. Rodbell, P. W. Marshall, J. A. Pellish, K. A. LaBel, M. A. Xapsos, S. E. Rauch, M. C. Hakey, J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, M. D. Berg, M. R. Friendlich, A. D. Phan, and C. M. Seidleck, "Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM," IEEE Trans. Nucl. Sci., vol.56, no.6, pp. 3499-3504, Dec. 2009.
50. R. Koga and W. A. Kolasinski, "Effects of heavy ions on microcircuits in space: Recently investigated upset mechanisms," IEEE Trans. Nucl. Sci., vol.34, no.1, pp. 46-51, Feb. 1987.
51. P. W. Marshall, C. J. Dale, T. R. Weatherford, M. La Macchia, and K. A. LaBel, "Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies," IEEE Trans. Nucl. Sci., vol.42, no.6, pp. 1844-1849, Dec. 1995.
52. R. A. Reed, M. A. Carts, P. W. Marshall, C. J. Marshall, S. Buchner,M. La Macchia, B. Mathes, and D. McMorrow, "Single event upset cross sections at various data rates," IEEE Trans. Nucl. Sci., vol.43, no.6, pp. 2862-2867, Dec. 1996.
53. N. Seifert, X. Zhu, D. Moyer, R. Mueller, R. Hokinson, N. Leland, M. Shade, and L. Massengill, "Frequency dependence of soft error rates for sub-micron CMOS technologies," in IEDM Tech. Dig., Dec. 2001, pp. 323-326.
54. J. Benedetto, P. Eaton, K. Avery, D. Mavis, M. Gadlage, T. Turflinger, P. E. Dodd, and G. Vizkelethy, "Heavy ion-induced digital single-event transients in deep submicron processes," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3480-3485, Dec. 2004.
55. S. Buchner, M. Baze, D. Brown, D. McMorrow, and J. Melinger, "Comparison of error rates in combinational and sequential logic," IEEE Trans. Nucl. Sci., vol.44, no.6, pp. 2209-2216, Dec. 1997.
56. D. G. Mavis and P. H. Eaton, "Soft error rate mitigation techniques for modern microcircuits," in Proc. Int. Reliability Physics Symp., Apr. 2002, pp. 216-225.
57. P. E. Dodd,M.R. Shaneyfelt, J. A. Felix, and J. R.Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3278-3284, Dec. 2004.
58. S. E. Diehl, J. E. Vinson, B. D. Shafer, and T. M. Mnich, "Considerations for single event immune VLSI logic," IEEE Trans. Nucl. Sci., vol.30, no.6, pp. 4501-4507, Dec. 1983.
59. M. P. Baze and S. P. Buchner, "Attenuation of single event induced pulses in CMOS combinational logic," IEEE Trans. Nucl. Sci., vol.44, no.6, pp. 2217-2223, Dec. 1997.
60. P. Eaton, J. Benedetto, D. Mavis, K. Avery,M. Sibley, M. Gadlage, and T. Turflinger, "Single event transient pulsewidth measurements using a variable temporal latch technique," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3365-3368, Dec. 2004.
61. V. Ferlet-Cavrois, P. Paillet, M. Gaillardin, D. Lambert, J. Baggio, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, E. W. Blackmore, O. Faynot, C. Jahan, and L. Tosti, "Statistical analysis of the charge collected in SOI and bulk devices under heavy ion and proton irradiation- Implications for digital SETs," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3242-3252, Dec. 2006.
62. V. Ferlet-Cavrois, P. Paillet, D. McMorrow, N. Fel, J. Baggio, S. Girard, O. Duhamel, J. S. Melinger, M. Gaillardin, J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, and J. A. Felix, "New insights into single event transient propagation in chains of inverters-Evidence for propagation- induced pulse broadening," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2338-2346, Dec. 2007.
63. D. Kobayashi, K. Hirose, Y. Yanagawa, H. Ikeda, H. Saito, V. Ferlet-Cavrois, D. McMorrow, M. Gaillardin, P. Paillet, Y. Arai, and M. Ohno, "Waveform observation of digital single-event transients employing monitoring transistor technique," IEEE Trans. Nucl. Sci., vol.55, no.6, pp. 2872-2879, Dec. 2008.
64. B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, "Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2506-2511, Dec. 2007.
65. V. Ferlet-Cavrois, D. McMorrow, D. Kobayashi, N. Fel, J. S. Melinger, J. R. Schwank, M. Gaillardin, V. Pouget, F. Essely, J. Baggio, S. Girard, O. Flament, P. Paillet, R. S. Flores, P. E. Dodd, M. R. Shaneyfelt, K. Hirose, and H. Saito, "A new technique for SET pulsewidth measurement in chains of inverters using pulsed laser irradiation," IEEE Trans. Nucl. Sci., vol.56, no.4, pp. 2014-2020, Aug. 2009.
66. L. W. Massengill and P. W. Tuinenga, "Single-event transient pulse propagation in digital CMOS," IEEE Trans. Nucl. Sci., vol.55, no.6, pp. 2861-2871, Dec. 2008.
67. S. Duzellier and R. Ecoffet, "Recent trends in single-event effect ground testing," IEEE Trans. Nucl. Sci., vol.43, no.2, pp. 671-677, Apr. 1996.
68. E. L. Petersen, J. C. Pickel, E. C. Smith, P. J. Rudeck, and J. R. Letaw, "Geometrical factors in SEE rate calculations," IEEE Trans. Nucl. Sci., vol.40, no.6, pp. 1888-1909, Dec. 1993.
69. P. J. McNulty, W. J. Beauvais, R. A. Reed, D. R. Roth, E. G. Stassinopoulos, and G. J. Brucker, "Charge collection at large angles of incidence," IEEE Trans. Nucl. Sci., vol.39, no.6, pp. 1622-1629, Dec. 1992.
70. L. W. Connell, P. J. McDaniel, A. K. Prinja, and F. W. Sexton, "Modeling the heavy ion upset cross section," IEEE Trans. Nucl. Sci., vol.42, no.2, pp. 73-82, Apr. 1995.
71. J. C. Pickel, "Single-event effects rate prediction," IEEE Trans. Nucl. Sci., vol.43, no.2, pp. 483-495, Apr. 1996.
72. P. E. Dodd, M. R. Shaneyfelt, and F. W. Sexton, "Charge collection and SEU from angled ion strikes," IEEE Trans. Nucl. Sci., vol.44, no.6, pp. 2256-2265, Dec. 1997.
73. K. M. Warren, B. D. Sierawski, R. A. Reed, R. A. Weller, C. Carmichael, A. Lesea, M. H. Mendenhall, P. E. Dodd, R. D. Schrimpf, L. W. Massengill, T. Hoang, H. Wan, J. L. De Jong, R. Padovani, and J. J. Fabula, "Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2419-2425, Dec. 2007.
74. M. S. Liu, H. Y. Liu, N. Brewster,D. Nelson, K. W. Golke, G. Kirchner, H. L. Hughes, A. Campbell, and J. F. Ziegler, "Limiting upset cross sections of SEU hardened SOI SRAMs," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3487-3493, Dec. 2006.
75. R. Koga, S. H. Penzin, K. B. Crawford, and W. R. Crain, "Single event functional interrupt (SEFI) sensitivity in microcircuits," in Proc. 1997 Eur. Conf. Radiation Its Effects Components Systems (RADECS), 1998, pp. 311-318.
76. R. Koga, J. George, G. Swift, C. Yui, L. Edmonds, C. Carmichael, T. Langley, P. Murray, K. Lanes, and M. Napier, "Comparison of Xilinx Virtex-II FPGA SEE sensitivities to protons and heavy ions," in Proc. 2003 Eur. Conf. Radiation Its Effects Components Systems (RADECS), 2004, pp. 273-278.
77. G. M. Swift, G. R. Allen, C. W. Tseng, C. Carmichael, G. Miller, and J. S. George, "Static upset characteristics of the 90 nm Virtex-4QV FPGAs," in Proc. IEEE Radiation Effects Data Workshop, 2008, pp. 98-105.
78. B. G. Henson, P. T. McDonald, and W. J. Stapor, "SDRAM space radiation effects measurements and analysis," in Proc. IEEE Radiation Effects Data Workshop, Jul. 1999, pp. 15-23.
79. R. Koga, S. H. Crain, P. Yu, and K. B. Crawford, "SEE sensitivity determination of high-density DRAMs with limited-range heavy ions," in Proc. IEEE Radiation Effects Data Workshop, Jul. 2001, pp. 182-189.
80. R. Koga, P. Yu, K. B. Crawford, S. H. Crain, and V. T. Tran, "Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)," in Proc. IEEE Radiation Effects Data Workshop, Jul. 2001, pp. 6-13.
81. T. Langley, R. Koga, and T. Morris, "Single-event effects test results of 512 MB SDRAMs," in Proc. IEEE Radiation Effects Data Workshop, Jul. 2003, pp. 98-101.
82. R. Ladbury, M. D. Berg, H. Kim, K. LaBel, M. Friendlich, R. Koga, J. George, S. Crain, P. Yu, and R. A. Reed, "Radiation performance of 1 Gbit DDR SDRAMs fabricated in the 90 nm CMOS technology node," in Proc.IEEERadiation Effects DataWorkshop, Jul. 2006, pp. 126-130.
83. R. Koga, P. Yu, S. Crain, and J. George, "Proton and heavy ion induced semi-permanent upsets in double data rate SDRAMs," in Proc. IEEE Radiation Effects Data Workshop, Jul. 2007, pp. 199-203.
84. T. R. Oldham, M. Suhail, M. R. Friendlich, M. A. Carts, R. L. Ladbury, H. S. Kim, M. D. Berg, C. Poivey, S. P. Buchner, A. B. Sanders, C. M. Seidleck, and K. A. LaBel, "TID and SEE response of advanced 4G NAND flash memories," in Proc. IEEE Radiation Effects Data Workshop, 2008, pp. 31-37.
85. H. Schmidt, D.Walter, F. Gliem, B. Nickson, R. Harboe-Sorensen, and A. Virtanen, "TID and SEE tests of an advanced 8 Gbit NAND-flash memory," in Proc. IEEE Radiation Effects Data Workshop, 2008, pp. 38-41.
86. J. M. Benedetto, J. Black, and G. Ott, "Soft error case study: Single event functional interrupts (SEFIs) in COTS SDRAMs," IEEE NSREC Short Course, pp. 1-20, 2008.
87. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix, V. Ferlet-Cavrois, P. Paillet, D. Lambert, F. W. Sexton, G. L. Hash, and E. W. Blackmore, "Effects of particle energy on proton-induced singleevent latchup," IEEE Trans. Nucl. Sci., vol.52, no.6, pp. 2622-2629, Dec. 2005.
88. K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contribution of nuclear reactions to heavy ion single event upset cross section measurements in a high-density SEU hardened SRAM," IEEE Trans. Nucl. Sci., vol.52, no.6, pp. 2125-2131, Dec. 2005.
89. N. A. Dodds, R. A. Reed, M. H. Mendenhall, R. A. Weller, M. A. Clemens, P. E. Dodd, M. R. Shaneyfelt, G. Vizkelethy, J. R. Schwank, V. Ferlet-Cavrois, J. H. Adams, Jr., R. D. Schrimpf, and M. P. King, "Charge generation by secondary particles from nuclear reactions in BEOL materials," IEEE Trans. Nucl. Sci., vol.56, no.6, pp. 3172-3179, Dec. 2009.
90. P. E. Dodd, J. R. Schwank, M. R. Shaneyfelt, J. A. Felix, P. Paillet, V. Ferlet-Cavrois, J. Baggio, R. A. Reed, K. M. Warren, R. A. Weller, R. D. Schrimpf, G. L. Hash, S. M. Dalton, K. Hirose, and H. Saito, "Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2303-2311, Dec. 2007.
91. R. A. Reed, R. A. Weller, R. D. Schrimpf, M. H. Mendenhall, K. M. Warren, and L. W. Massengill, "Implications of nuclear reactions for single event effects test methods and analysis," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3356-3362, Dec. 2006.
92. R. A. Reed, R. A. Weller, M. H. Mendenhall, J.-M. Lauenstein, K. M. Warren, J. A. Pellish, R. D. Schrimpf, B. D. Sierawski, L. W. Massengill, P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, J. R. Schwank, N. F. Haddad, R. K. Lawrence, J. H. Bowman, and R. Conde, "Impact of ion energy and species on single event effects analysis," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2312-2321, Dec. 2007.
93. J. L. Andrews, J. E. Schroeder, B. L. Gingerich, W. A. Kolasinski, R. Koga, and S. E. Diehl, "Single event error immune CMOS RAM," IEEE Trans. Nucl. Sci., vol.29, no.6, pp. 2040-2043, Dec. 1982.
94. P. S. Winokur, F. W. Sexton, D. M. Fleetwood, M. D. Terry, M. R. Shaneyfelt, P. V. Dressendorfer, and J. R. Schwank, "Implementing QML for radiation hardness assurance," IEEE Trans. Nucl. Sci., vol.37, no.6, pp. 1794-1805, Dec. 1990.
95. P. Roche, F. Jacquet, C. Caillat, and J.-P. Schoellkopf, "An alpha immune and ultra low neutron SER high density SRAM," in Proc. Int. Reliability Physics Symp., 2004, pp. 671-672.
96. T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron CMOS technology," IEEE Trans. Nucl. Sci., vol.43, no.6, pp. 2874-2878, Dec. 1996.
97. K. M. Warren, B. D. Sierawski, R. A. Reed, R. A. Weller, C. Carmichael, A. Lesea, M. H. Mendenhall, P. E. Dodd, R. D. Schrimpf, L. W. Massengill, T. Hoang, H. Wan, J. L. De Jong, R. Padovani, and J. J. Fabula, "Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2419-2425, Dec. 2007.
98. W. F. Heidergott, "System level mitigation strategies," IEEE NSREC Short Course, pp. 1-67, 1999.
99. R. Ladbury, "Radiation hardening at the system level," IEEE NSREC Short Course, pp. 1-94, 2007.
100. K. A. LaBel and L. M. Cohn, "Radiation testing and evaluation issues for modern integrated circuits," RADECS Short Course Notes, 2005.
101. R. Koga, S. H. Crain, P. Yu, and K. B. Crawford, "See sensitivity determination of high-density DRAMs with limited-range heavy ions," in Proc. IEEE Radiation Effects Data Workshop, 2000, pp. 45-52.
102. G. M. Swift, D. G. Millward, and H. L. Clark, "Single-event testing using heavy ion irradiation through thick layers of material," in Proc. 2001 Eur. Conf. Radiation Its Effects Components Systems (RADECS), 2002, pp. 438-442.
103. J. George, R. Koga, G. Swift, G. Allen, C. Carmichael, and C. W. Tseng, "Single event upsets in Xilinx Virtex-4 FPGA devices," in Proc. IEEE Radiation Effects Data Workshop, 2006, pp. 109-114.
104. G. M. Swift and A. H. Johnston, "Practical aspects of single-event testing: Experimental planning and interpretation (Short Course) ," presented at the RADECS, 2007.
105. K. A. LaBel, R. L. Ladbury, L.M. Cohn, and T. R. Oldham, "Radiation test challenges for scaled commercial memories," IEEE Trans. Nucl. Sci., vol.55, no.4, pp. 2174-2180, Aug. 2008.
106. M. D. Berg, K. A. LaBel, H. Kim, M. Friendlich, A. Phan, and C. Perez, "A comprehensive methodology for complex field programmable gate array single event effects test and evaluation," IEEE Trans. Nucl. Sci., vol.56, no.2, pp. 366-374, 2009.
107. J. W. Howard, M. A. Carts, R. Stattel, C. E. Rogers, T. L. Irwin, C. Dunsmore, J. A. Sciarini, and K. A. LaBel, "Total dose and single event effects testing of the Intel Pentium III (P3) and AMD K7 microprocessors," in Proc. IEEE Radiation Effects DataWorkshop, 2001, pp. 38-47.
108. K. M. Warren, A. L. Sternberg, J. D. Black, R. A. Weller, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, and L. W. Massengill, "Heavy ion testing and single event upset rate prediction considerations for a DICE flip-flop," IEEE Trans. Nucl. Sci., vol.56, no.6, pp. 3130-3137, Dec. 2009.
109. D. E. Fulkerson, D. K. Nelson, and R. M. Carlson, "Boxes: An engineering methodology for calculating soft error rates in SOI integrated circuits," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3329-3335, Dec. 2006.
110. K. M. Warren, R. A. Weller, B. D. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. E. Porter, J. D. Wilkinson, K. A. LaBel, and J. H. Adams, "Application of RADSAFE to model the single event upset response of a 0.25μm CMOS SRAM," IEEE Trans. Nucl. Sci., vol.54, no.4, pp. 898-903, Aug. 2007.
111. J.-P. Colinge and A. Terao, "Effects of total-dose irradiation on gateall- around (GAA) devices," IEEE Trans. Nucl. Sci., vol.40, no.2, pp. 78-82, 1993.
112. M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, S. Cristoloveanu, O. Faynot, and C. Jahan, "High tolerance to total ionizing dose of ω-shaped gate field-effect transistors," Appl. Phys. Lett., vol.88, no.22, p. 223511, 2006.
113. M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, O. Faynot, C. Jahan, and S. Cristoloveanu, "Total ionizing dose effects on triple-gate FETs," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3158-3165, Dec. 2006.
114. B. G. Jun, H. D. Xiong, A. L. Sternberg, C. R. Cirba, D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, J. R. Schwank, and S. Cristoloveanu, "Total dose effects on double gate fully depleted SOI MOSFETs," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3767-3772, Dec. 2004.
115. J. P. Colinge, X. Wu, P. C. H. Chan, A. Orozco, A. Vazquez, and A. Chaudhry, "Dose radiation effects in FinFETs," Solid-State Electron., vol.50, no.2, pp. 287-290, 2006.
116. F. El Mamouni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, S. Cristoloveanu, and W. Xiong, "Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs," IEEE Trans. Nucl. Sci., vol.56, no.6, pp. 3250-3255, Dec. 2009.
117. J. A. Felix, D. M. Fleetwood, R. D. Schrimpf, J. G. Hong, G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, "Total-dose radiation response of hafnium-silicate capacitors," IEEE Trans. Nucl. Sci., vol.49, no.6, pp. 3191-3196, Dec. 2002.
118. J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. E. Dodd, E. P. Gusev, R. M. Fleming, and C. D'Emic, "Charge trapping and annealing in high-κ gate dielectrics," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3143-3149, Dec. 2004.
119. S. K. Dixit, X. J. Zhou, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelide, R. Choi, G. Bersuker, and L. C. Feldman, "Radiation induced charge trapping in ultrathin HfO -based MOSFETs," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 1883-1890, Dec. 2007.
120. M. Simons, "Radiation effects in GaAs integrated circuits: A comparison with silicon," in IEEE GaAs IC Symp. Dig., 1983, pp. 124-128.
121. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, "Carbon nanotube electronics," Proc. IEEE, vol.91, no.11, pp. 1772-1784, Nov. 2003.
122. P. Avouris, "Supertubes," IEEE Spectrum, vol.41, no.8, pp. 34-39, Aug. 2004.
123. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Electron Device Lett., vol.28, no.4, pp. 282-284, 2007.
124. J. Kedzierski, P.-L. Hsu, P. Healey, P. W. Wyatt, C. L. Keast, M. Sprinkle, C. Berger, and W. A. de Heer, "Epitaxial graphene transistors on SiC substrates," IEEE Trans. Electron Devices, vol.55, no.8, pp. 2078-2085, 2008.
125. S. Hudgens and B. Johnson, "Overview of phase-change chalcogenide nonvolatile memory technology," MRS Bull., vol.29, no.11, pp. 829-832, 2004.
126. S. Tehrani, J. M. Slaughter, M. Deherrera, B. N. Engel, N. D. Rizzo, J. Salter, M. Durlam, R. W. Dave, J. Janesky, B. Butcher, K. Smith, and G. Grynkewich, "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol.91, no.5, pp. 703-714, 2003.
127. J. D. Maimon, K. K. Hunt, L. Burcin, and J. Rodgers, "Chalcogenide memory arrays: Characterization and radiation effects," IEEE Trans. Nucl. Sci., vol.50, no.6, pp. 1878-1884, Dec. 2003.
128. A. Gasperin, N. Wrachien, A. Paccagnella, F. Ottogalli, U. Corda, P. Fuochi, and M. Lavalle, "Total ionizing dose effects on 4 Mbit phase change memory arrays," IEEE Trans. Nucl. Sci., vol.55, no.4, pp. 2090-2097, 2008.
129. R. R. Katti, J. Lintz, L. Sundstrom, T. Marques, S. Scoppettuolo, and D. Martin, "Heavy-ion and total ionizing dose TID performance of a 1 Mbit magnetoresistive random access memory (MRAM)," in IEEE Radiation Effects Data Workshop, 2009, pp. 103-105.
130. D. N. Nguyen and F. Irom, "Total ionizing dose (TID) tests on nonvolatile memories: Flash and MRAM," in Proc. IEEE Radiation Effects Data Workshop, 2007, pp. 194-198.
131. D. McMorrow, T. R. Weatherford, S. Buchner, A. R. Knudson, J. S. Melinger, L. H. Tran, and A. B. Campbell, "Single-event phenomena in GaAs devices and circuits," IEEE Trans. Nucl. Sci., vol.43, no.2, pp. 628-644, Apr. 1996.
132. B. D. Weaver, D. McMorrow, and L. M. Cohn, "Radiation effects in III-V semiconductor electronics," Int. J. High-Speed Electron. Syst., vol.13, pp. 293-326, 2003.
133. D. McMorrow, J. B. Boos, A. R. Knudson, W. T. Lotshaw, D. Park, J. S. Melinger, B. R. Bennett, A. Torres, V. Ferlet-Cavrois, J.-E. Sauvestre, C. D'Hose, and O. Flament, "Transient response of III-V field-effect transistors to heavy-ion irradiation," IEEE Trans. Nucl. Sci., vol.51, no.6, pp. 3324-3331, Dec. 2004.