Single-event phenomena in gaas devices and circuits

IEEE Transactions on Nuclear Science

Volumn 43, Issue 2 PART 1, 1996, Pages 628-644

  McMorrow, Dale ^a   Weatherford, Todd R ^a   Buchner, Steve ^b   Knudson, Alvin R ^c   Melinger, Joseph S ^a   Tran, Lan Hu ^a   Campbell III, Arthur B ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Naval Postgraduate School   (United States)

^c SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COSMIC RAYS; ELECTRIC NETWORK TOPOLOGY; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; IONS; LOGIC CIRCUITS; LOW TEMPERATURE PROPERTIES; PROTONS;

CHARGE ENHANCEMENT MECHANISM; COSMIC RAY HEAVY IONS; GATE EDGE EFFECT; PERIPHERAL ISOLATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030127146     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.490906     Document Type: Article

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