Chalcogenide Memory Arrays: Characterization and Radiation Effects

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1878-1884

  Maimon, Jonathan D ^a   Hunt, Kenneth K ^b,c   Burcin, Laura ^d   Rodgers, John ^d  

^a Ovonyx Inc   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d BAE SYSTEMS   (United States)

Author keywords

Chalcogenide; Memory; Nonvolatile; Phase change; Single event; Total dose

Indexed keywords

CMOS INTEGRATED CIRCUITS; DURABILITY; ELECTRIC CURRENTS; ERROR ANALYSIS; LOGIC CIRCUITS; RADIATION EFFECTS; RANDOM ACCESS STORAGE; ROM;

CHALCOGENIDE MEMORY ARRAYS; MEMORY; NONVOLATILE MEMORY; PHASE CHANGE; SINGLE EVENT EFFECTS (SEE); TOTAL DOSE;

OPTICAL DATA STORAGE;

EID: 1242310321     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821377     Document Type: Conference Paper

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