Transient response of III-V field-effect transistors to heavy-ion irradiation

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3324-3331

  McMorrow, Dale ^a   Boos, J Brad ^a   Knudson, Alvin R ^b   Lotshaw, William T ^b   Park, Doe ^a   Melinger, Joseph S ^a   Bennett, Brian R ^a   Torres, Alphonse ^c   Ferlet Cavrois, Veronique ^c   Sauvestre, Jean Etienne ^c   D'Hose, Claudine ^c   Flament, Olivier ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c CEA DIF   (France)

Author keywords

AlSb; Charge collection; GaAs; HEMT; InAlAs; InAs; InGaAs; InP; MESFET; Single event transient; Single event upset

Indexed keywords

ALSB; CHARGE COLLECTION; INALAS; INAS; SINGLE-EVENT TRANSIENT; SINGLE-EVENT UPSET;

BANDWIDTH; HEAVY IONS; IONIZATION; MESFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 19944422724     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839529     Document Type: Conference Paper

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