Enhanced degradation in power MOSFET devices due to heavy ion irradiation

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2181-2189

  Felix, James A ^a,b   Shaneyfelt, Marty R ^a,b   Schwank, James R ^a,b   Dalton, Scott M ^b   Dodd, Paul E ^a,b   Witcher, J Brandon ^b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

COTS; Gamma ray; Heavy ion; Microdose; Power MOSFETS; Proton; Radiation; Total dose

Indexed keywords

MICRODOSE; POWER MOSFETS; TOTAL DOSE;

GAMMA RAYS; HEAVY IONS; ION BOMBARDMENT; LEAKAGE CURRENTS; RADIATION EFFECTS; SPACE APPLICATIONS; TRANSISTORS;

MOSFET DEVICES;

EID: 37249091226     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910873     Document Type: Conference Paper

References (26)

1. Z. J. Shen, D. N. Okada, F. Y. Lin, S. Anderson, and X. Cheng, "Lateral power MOSFET for megahertz-frequency, high-density DC/DC converters," IEEE Trans. Power Elec., vol. 21, no. 1, pp. 11-17, 2006, 2006.
2. dson 12 V P-channel trench MOSFET," in IEEE Int. Symp. Power Semicond. Dev. ICs (ISPSD), May 1999, pp. 303-306.
3. 2 specific on-resistance at 2.7 V," in Proc. IEEE Int. Symp. Power Semicond. Dev. ICs (ISPSD), May 1996, pp. 53-56.
4. J. L. Titus, C. F. Wheatley, M. Allenspach, R. D. Schrimpf, D. I. Burton, J. R. Brews, K. F. Galloway, and R. L. Pease, "Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs," IEEE Trans. Nucl.. Sci., vol. 43, no. 6, pp. 2938-2943, Dec. 1996.
5. M. Allenspach, C. Dachs, G. H. Johnson, R. D. Schrimpf, E. Lorfevre, J. M. Palau, J. R. Brews, K. F. Galloway, J. L. Titus, and C. F. Wheatley, "SEGR and SEB in n-channel power MOSFETs," IEEE Trans. Nucl.. Sci., vol. 43, no. 6, pp. 2927-2931, Dec. 1996.
6. J. A. Felix, M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, J. R. Schwank, and S. M. Dalton, "Radiation-induced off-state leakage current in commercial power MOSFETs," IEEE Trans. Nuc. Sci., vol. 52, no. 6, pp. 2378-2386, Dec. 2005.
7. R. Koga, W. R. Crain, K. B. Crawford, D. D. Lau, S. D. Pinkerton, B. K. Yi, and R. Chitty, "On the suitability of non-hardened high density SRAMs for space applications," IEEE Trans. Nucl.. Sci., vol. 38, no. 6, pp. 1507-1513, Dec. 1991.
8. C. Dufour, P. Garnier, T. Carriere, J. Beaucour, R. Ecoffet, and M. Labrunee, "Heavy-ion induced single hard errors on submicromic memories," IEEE Trans. Nucl.. Sci., vol. 39, no. 6, pp. 1693-1697, Dec. 1992.
9. T. R. Oldham, K. W. Bennett, J. Beaucour, T. Carriere, C. Poivey, and P. Garnier, 'Total dose failures in advanced electronics from single ions," IEEE Trans. Nucl.. Sci., vol. 40, no. 6, pp. 1820-1830, Dec. 1993.
10. J. C. Pickel, "Single event damage effects in cryogenic CMOS microelectronics," IEEE Trans. Nucl.. Sci., vol. 43, no. 3, pp. 912-917, Jun. 1996.
11. dSon 12 V P-channel trench MOSFET," in Proc. IEEE Int. Symp. Power Semicond. Dev. ICs (ISPSD), May 1999, pp. 303-306.
12. 2 by heavy charged particles," IEEE Trans. Nucl. Sci., vol. 28, no. 6, pp. 3975-3980, Dec. 1981.
13. P. S. Wmokur, G. K. Lum, M. R. Shaneyfelt, F. W. Sexton, G. L. Hash, and L. Scott, "Use of COTS microelectronics in radiation environments," IEEE Trans. Nucl.. Sci., vol. 46, no. 6, pp. 1494-1503, Dec. 1999.
14. M. R. Shaneyfelt, P. Tangyunyong, T. A. Hill. J. M. Soden. R. S. Flores, J. R. Schwank, P. E. Dodd, and G. L. Hash, "Identification of radiationinduced parasitic leakage paths using light emission microscopy," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2782-2786, Oct. 2004.
15. D. Zupac, S. R. Anderson, R. D. Schrimpf, and K. F. Galloway, "Determining the drain doping in DMOS transistors using the hump in the leakage current.," IEEE Trans. Electron. Dev., vol. 41, no. 12, pp. 2326-2336, Dec. 1994.
16. S. R. Anderson, D. Zupac, R. D. Schrimpf, and K. F. Galloway, "The surface generation hump in irradiated power MOSFETs," IEEE Trans. Nucl.. Sci., vol. 41, no. 6, pp. 2443-2451, Dec. 1994.
17. M. S. Park and C. R. Wie, "Study of radiation effects in gamma-ray irradiated power VDMOSFET by DCTV technique," IEEE Trans. Nucl.. Sci., vol. 48, no. 6, pp. 2285-2293, Dec. 2001.
18. M. S. Park, I. M. Na, C. I. Lee, and C. R. Wie, "DCIV and specttal charge-pumping studies of gamma-ray and X-ray irradiated power VDMOSFET devices," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3230-3237, Dec. 2002.
19. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, "Charge yield for cobalt-60 and 10-kev X-ray irradiations of MOS devices," IEEE Trans. Nucl.. Sci., vol. 38, no. 6, pp. 1187-1194, Dec. 1991.
20. 2, Chapiter Ionizing Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, Eds. New York: Wiley, 1989, pp. 87-192.
21. J. R. Schwank, M. R. Shaneyfelt, P. Paillet, D. E. Beutler, V. FerletCavrois, B. L. Draper, R. A. Loemker, P. E. Dodd, and F. W. Sexton, "Optimum laboratory radiation source for hardness assurance testing," IEEE Trans. Nucl.. Sci., vol. 48, no. 6, pp. 2152-2157, Dec. 2001.
22. P. Paillet, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, R. L. Jones, O. Flament, and E. W. Blackmore, "Comparison of charge yield in MOS devices for different radiation sources," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2656-2661, Dec. 2002.
23. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, V. Ferlet-Cavrois, R. A. Loemker, P. S. Winokur, D. M. Fleetwood, P. Paillet, J. L. Leray, B. L. Draper, S. C. Witczak, and L. C. Riewe, "Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides.," IEEE Trans. Nucl.. Sci., vol. 47, no. 6, pp. 2175-2182, Dec. 2000.
24. P. Paillet, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, R. L. Jones, O. Flament, and E. W. Blackmore, "Total dose hardness assurance testing using laboratory radiation sources.," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2310-2315, Dec. 2003.
25. P. E. Dodd, "Physics-based simulation of single-event effects," IEEE Trans. Device Mater. Reliab., vol. 5, no. 3, pp. 343-357, Sep. 2005.
26. E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE, vol. 76, no. 11, pp. 1423-1442, Nov. 1988.