Physical mechanisms of ion-induced stuck bits in the hyundai 16M × 4 SDRAM

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3265-3271

  Edmonds, L D ^a   Scheick, L Z ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Displacement damage; Single event effects

Indexed keywords

DISPLACEMENT DAMAGE; HYUNDAI; PHYSICAL MECHANISMS; SINGLE EVENT EFFECTS; SINGLE PARTICLES; STORAGE CAPACITORS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 58849087596     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2006902     Document Type: Conference Paper

References (13)

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