BUSFET - A radiation-hardened SOI transistor

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1809-1816

  Schwank, J R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BODY UNDER SOURCE FIELD EFFECT TRANSISTOR; CHARGE TRAPPING; DOPING CONCENTRATION; TOTAL DOSE HARDNESS;

COMPUTER SIMULATION; ELECTRON TRAPS; IONIZING RADIATION; OXIDES; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THICK FILMS;

FIELD EFFECT TRANSISTORS;

EID: 0033324901     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819158     Document Type: Article

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