Fin-width dependence of ionizing radiatION-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3250-3255

  Mamouni, Farah El ^a   Zhang, En Xia ^a   Schrimpf, Ronald D ^a   Fleetwood, Daniel M ^a   Reed, Robert A ^a   Cristoloveanu, Sorin ^b   Xiong, Weize ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b IMEP LAHC   (France)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Annealing; Buried oxide (BOX); Fin width; Fully depleted (FD) finFETs; Silicon on insulator (SOI); Subthreshold swing (SS); Total ionizing dose (TID)

Indexed keywords

BURIED OXIDES; FIN WIDTHS; FINFETS; FULLY DEPLETED; SILICON-ON-INSULATORS; SUBTHRESHOLD SWING; TOTAL IONIZING DOSE;

ANNEALING; DEGRADATION; FINITE DIFFERENCE METHOD; FORCED CONVECTION; IONIZING RADIATION; MICROSENSORS;

FINS (HEAT EXCHANGE);

EID: 72349084818     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2034155     Document Type: Conference Paper

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