TID and SEE response of advanced Samsung and Micron 4G NAND flash memories for the NASA MMS mission

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2009, Pages 114-122

  Oldham, Timothy R ^a   Friendlich, M R ^a   Sanders, A B ^a   Seidleck, C M ^a   Kim, H S ^b   Berg, M D ^b   LaBel, K A ^b  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

MMS MISSION; NAND FLASH MEMORY; SAMSUNG;

BIT ERROR RATE; FLASH MEMORY; IONIZING RADIATION; NASA; SECONDARY EMISSION; TECHNICAL PRESENTATIONS;

RADIATION EFFECTS;

EID: 77950954647     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2009.5336305     Document Type: Conference Paper

References (4)

1. F. Irom and D.N. Nguyen, Single Event Effect Characterization of High Density Commercial NAND and NOR Nonvolatile Memories, IEEE Trans. Nucl. Sci., NS-54, 2547 (2007).
2. J.R. Brews et al., A Conceptual Model of Gate Rupture in Power MOSFETs, IEEE Trans. Nucl. Sci., NS-40, 1929 (1993).
3. F.B. McLean et al., Charge Funneling in N- and P-Type Substrates, IEEE Trans. Nucl. Sci., NS-29, 2018 (1982).
4. B.K. Choi et al., Long-Term Reliability Degradation of Ultrathin Dielectric Films Due to Heavy Ion Irradiation, IEEE Trans. Nucl. Sci., NS-49, 3045 (2002).