Total dose hardening of simox buried oxides for fully depleted devices in rad-tolerant applications

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2646-2650

  Brady, F T ^a   Hughes, H L ^a   McMarr, P J ^b   Mrstik, B ^b  

^a LOCKHEED MARTIN   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; GATES (TRANSISTOR); ION IMPLANTATION; IONIZATION OF SOLIDS; OXIDES; RADIATION HARDENING; X RAYS;

BURIED OXIDES; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); TOTAL DOSE HARDENING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030365375     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556848     Document Type: Article

References (6)

1. H. K. Lim and J. G. Possum, "Threshold Voltage of Thin-Film Silicon-on-Insulator (SOI) MOSFET's", IEEE Transactions on Electron Devices, Vol. 30, p. 1244. 1983.
2. D. C. Mayer, "Modes of Operation and Radiation Sensitivity of Ultrathin SOI Transistors", IEEE Transactions on Electron Devices, Vol. 37, p. 1280, 1990.
3. F. Brady, T. Scott, R. Brown, J. Damato, and N. Haddad, "FullyDepleted Submicron SOI for Radiation Hardened Applications", IEEE Transactions on Nuclear Science, Vol. 41, p. 2304,1994.
4. A. Edenfeld, L. Wang, J. Seliskar, and N. Haddad, "A 0. 5 um CMOS/SOI Technology", 1991 IEEE International SOI Conference Proceedings, p. 130,1991.
5. F. Brady, N. Haddad, and L. Wang, "Effect of Total Dose Radiation on Device Self Latch-Up, 1992 IEEE International SOI Conference Proceedings, p. 88,1992.
6. J. Gautier and A. -J Auberton-Herve, "A Latch Phenomenon in Buried Channel N-Body SOI NMOSFET's", IEEE Electron Device Letters, Vol. 12, p. 372,1991.