A graphene field-effect device

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 282-284

  Lemme, Max C ^a   Echtermeyer, Tim J ^b   Baus, Matthias ^b   Kurz, Heinrich ^a,b  

^a AMO GMBH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Field effect; Graphene; Mobility; MOSFET; Transistor

Indexed keywords

CMOS COMPATIBLE; FIELD EFFECTS; FIELD-EFFECT DEVICES; GRAPHENES; MOBILITY; MOS STRUCTURE; MOS-FET; PROCESS FLOWS; SILICON-ON-INSULATOR MOSFETS; TOPDOWN;

CARRIER MOBILITY; MONOLAYERS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

GRAPHENE;

EID: 34547841212     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.891668     Document Type: Article

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