Comparison of accelerated DRAM soft error rates measured at component and system level

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 482-487

  Borucki, Ludger ^a   Schindlbeck, Guenter ^a   Slayman, Charles ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b SUN MICROSYSTEMS   (United States)

Author keywords

DRAM; Error correction code (ECC); Multi bit upset (MBU); Multi cell upset (MCU); Single event upset (SEU); Soft error rate (SER)

Indexed keywords

DRAM; ERROR CORRECTION CODE (ECC); MULTI-BIT UPSET (MBU); MULTI-CELL UPSET (MCU); SINGLE EVENT UPSET (SEU); SOFT ERROR RATE (SER);

COMPUTER NETWORKS; COSMOLOGY; DYNAMIC RANDOM ACCESS STORAGE; ERRORS; INTEGRATED CIRCUITS; IONIZING RADIATION; MICROPROCESSOR CHIPS; NEUTRON SOURCES; NEUTRONS; RELIABILITY;

ERROR CORRECTION;

EID: 51549113195     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558933     Document Type: Conference Paper

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