Ion-induced stuck bits in 1T/1C SDRAM cells

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1925-1930

  Edmonds, Larry D ^a   Guertin, Steven M ^a   Scheick, Leif Z ^a   Nguyen, Duc ^a   Swift, Gary M ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Microdose; Stuck bit cross sections; Stuck bit rates; Stuck bits

Indexed keywords

ANNEALING; DYNAMIC RANDOM ACCESS STORAGE; ENERGY TRANSFER; HEAVY IONS; PROTON IRRADIATION; RADIATION EFFECTS;

SINGLE EVENT GATE RUPTURE; STUCK BIT RATES;

NUCLEAR PHYSICS;

EID: 0035722020     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983152     Document Type: Conference Paper

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14. Characterization of single hard errors (SHE) in 1M-bit SRAM's from single ion