High tolerance to total ionizing dose of Ω -shaped gate field-effect transistors

Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

  Gaillardin, Marc ^a   Paillet, Philippe ^b   Ferlet Cavrois, V́ronique ^b   Cristoloveanu, Sorin ^a   Faynot, Olivier ^c   Jahan, Carine ^c  

^a IMEP LAHC   (France)

^b CEA DIF   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); IONIZING RADIATION; SILICON ON INSULATOR TECHNOLOGY;

DEVICE GEOMETRY; ELECTROSTATIC CONTROL; FIN FIELD-EFFECT TRANSISTOR (FINFET);

MOSFET DEVICES;

EID: 33744811946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206097     Document Type: Article

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