Radiation performance of 1 Gbit DDR SDRAMs fabricated in the 90 nm CMOS technology node

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2006, Pages 126-130

  Ladbury, R ^a,b   Berg, M D ^a,c   Kim, H ^a,c   LaBel, K ^a,b   Friendlich, M ^a,c   Koga, R ^a,d   George, J ^a,d   Crain, S ^a,d   Yu, P ^a,d   Reed, R A ^a,e  

^a IEEE

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c Muniz Engineering Incorporated   (United States)

^d AEROSPACE CORPORATION   (United States)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

Quality assurance; Radiation effects; Reliability estimation

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA REDUCTION; QUALITY ASSURANCE; RADIATION EFFECTS;

RELIABILITY ESTIMATION; SINGLE EVENT EFFECT (SEE);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 44449103790     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2006.295480     Document Type: Conference Paper

References (9)

1. H. N. Becker, "Latent damage in CMOS devices from single-event latchup", IEEE Trans. Nucl. Sci. 49, No. 6, Dec. 2002, 3009-3015.
2. Version M: http://www.samsung.com/Products/Semiconductor/DDR_DDR2/ DDRSDRAM/Component/1Gbit/K4H1G0438M/ds_ddr_1gb_m_die_x4x8_rev10.pdf , Version A: http://www.samsung.com/Products/Semiconductor/DDR_DDR2/DDRSDRAM/Component/ 1Gbit/K4H1G0438A/ds_k4h1g0x38a_rev04.pdf
3. J. Howard, "Development of a Low-Cost and High-Speed Single Event Effects Testers based on Reconfigurable Field Programmable Gate Arrays (FPGA)," 2006 Single-Event Effects Symposium, Long Beach, CA, April 10-12, 2006.
4. R. Koga et al., "Permanent Single Event Functional Interrupts (SEFIs) in 128- and 256-megabit Synchronous Dynamic Random Access Memories," Radiation Effects Data Workshop, 2001, 16-20 July 2001, 6-13.
5. R. Ladbury, "Performance of the high-energy single-event effects test Facility (SEETF) at Michigan State University's National Superconducting Cyclotron laboratory (NSCL)", IEEE Trans. Nucl. Sci. 51, No. 6, Dec. 2004, 3664-3668.
6. J. F. Ziegler et al., The Stopping and Range of Ions in Solids. New York: Pergamon, 1984.
7. J. Benedetto, "Examination of Single Event Functional Interrupts (SEFIs) in COTS SDRAMS," 2006 Single-Event Effects Symposium, Long Beach, CA, April 10-12, 2006.
8. R. Koga et al., "SEE sensitivity determination of high-density DRAMs with limited-range heavy ions," Radiation Effects Data Workshop, 2003. IEEE, July 21-25, 2003, 182-189.
9. T. Langley et al., "Single-event Effects Test Results of 512MB SDRAMs," Radiation Effects Data Workshop, 2003. IEEE, July 21-25, 2003, 98-101.