Total-dose radiation response of hafnium-silicate capacitors

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3191-3196

  Felix, J A ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Hong, J G ^b   Lucovsky, G ^b   Schwank, J R ^c   Shaneyfelt, M R ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Alternative dielectric film; Burn in effects; MOS capacitor; Oxide trapped; Radiation effects

Indexed keywords

CAPACITANCE; COMPUTATIONAL METHODS; DIELECTRIC FILMS; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HEAVY IONS; IRRADIATION; MOS CAPACITORS; OXIDES; RADIATION EFFECTS; SILICATES; X RAY ANALYSIS;

VOLTAGE SHIFTS;

HAFNIUM COMPOUNDS;

EID: 0036956117     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805392     Document Type: Conference Paper

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