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1
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0035723154
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SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments
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Dec
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P. Dodd, M. Shaneyfelt, K. Horn, D. Walsh, G. Hash, T. Hill, B. Draper, J. Schwank, F. Sexton, and P. Winokur, "SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1893-1903, Dec. 2001.
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Sexton, F.9
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2
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0036952547
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SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using rad-hard circuit design
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Dec
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K. Hirose, H. Saito, Y. Kuroda, S. Ishii, Y. Fukuoka, and D. Takahashi, "SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using rad-hard circuit design," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2965-2968, Dec. 2002.
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33846335236
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[Online]. Available: https://creme96.nrl.navy.mil
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PSpice Circuit Analysis MicroSim Corporation, Version 4.05, pp. 149-154, Jan. 1991.
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5
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A charge-control SPICE engineering model for the parasitic bipolar transistor action in SOI CMOS SEU
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Transient radiation effects in SOI memories
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G. E. Davis, L. R. Hite, T. G. Blake, C. E. Chen, and H. Lam, "Transient radiation effects in SOI memories," IEEE Trans. Nucl. Sci., vol. 32, no. 6, pp. 4432-4437, Dec. 1985.
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9
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Accurate calculations of the forward drop and power dissipation in thyristors
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Jan
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M. S. Adler, "Accurate calculations of the forward drop and power dissipation in thyristors," IEEE Trans. Electron Devices, pp. 16-22, Jan. 1978, no. ED-25.
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33846281953
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P. Dodd, Basic mechanisms for single-event effects, in Proc. IEEE NSREC Conf. Short Course, Norfolk, VA, 1999, pp. II-1-II-85.
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P. Dodd, "Basic mechanisms for single-event effects," in Proc. IEEE NSREC Conf. Short Course, Norfolk, VA, 1999, pp. II-1-II-85.
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11
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33846285786
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Lessons learned in avoiding in-beam experimental problems in SEE testing: Tales from the cave part 2
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Manhattan Beach, CA, Apr. 27
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G. Swift, "Lessons learned in avoiding in-beam experimental problems in SEE testing: Tales from the cave part 2," in Proc. 14th Biennial Single Event Effects Symp., Manhattan Beach, CA, Apr. 27, 2004.
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R. C. Lacoe, "CMOS scaling design principles and hardening-by-design methodology," in Proc. IEEE NSREC Conf. Short Course, Monterey, CA, 2003, pp. II-98-II-111.
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13
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0032313727
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Impact of Ion Energy on Single Event Upset
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Dec
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P. E. Dodd, O. Musseau, M. R. Shaneyfelt, F. W. Sexton, C. D'hose, G. L. Hash, M. Martinez, R. A. Loemker, J.-L. Leray, and P. S. winokur, "Impact of Ion Energy on Single Event Upset," IEEE Trans. Nucl. Sci., vol. 45, no. 6, p. 2483, Dec. 1998.
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Dodd, P.E.1
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D'hose, C.5
Hash, G.L.6
Martinez, M.7
Loemker, R.A.8
Leray, J.-L.9
winokur, P.S.10
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14
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33846282765
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Track widths were also confirmed in private communications with Paul Dodd, Aug. 2, 2006.
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Track widths were also confirmed in private communications with Paul Dodd, Aug. 2, 2006.
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