Challenges in hardening technologies using shallow-trench isolation

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2584-2592

  Shaneyfelt, M R ^a   Dodd, P E ^a   Draper, B L ^a   Flores Sandia, R S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; ELECTRIC FIELD EFFECTS; ION IMPLANTATION; OXIDATION; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

LOCAL OXIDATION OF SILICON (LOCOS); SHALLOW-TRENCH ISOLATION;

CMOS INTEGRATED CIRCUITS;

EID: 0032318033     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736501     Document Type: Article

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