Enhanced proton and neutron induced degradation and its impact on hardness assurance testing

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3096-3105

  Shaneyfelt, Marty R ^a   Felix, James A ^a   Dodd, Paul E ^a   Schwank, James R ^a   Dalton, Scott M ^a   Baggio, Jacques ^b   Ferlet Cavrois, Véronique ^b   Paillet, Philippe ^b   Blackmore, Ewart W ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CEA DIF   (France)

^c TRIUMF   (Canada)

Author keywords

Microdose effects; Neutron effects; Power MOSFETs; Proton effects; Radiation effects; Radiation hardness assurance; Radiation hardness assurance methodology; Radiation hardness assurance testing; Single event effects

Indexed keywords

ATOMS; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; HARDNESS; HARDNESS TESTING; INTEGRATED CIRCUITS; MOSFET DEVICES; NEUTRON IRRADIATION; NEUTRONS; PROTONS; RADIATION; SILICON COMPOUNDS;

MICRODOSE EFFECTS; NEUTRON EFFECTS; POWER MOSFETS; PROTON EFFECTS; RADIATION HARDNESS ASSURANCE; RADIATION HARDNESS ASSURANCE METHODOLOGY; RADIATION HARDNESS ASSURANCE TESTING; SINGLE EVENT EFFECTS;

RADIATION EFFECTS;

EID: 58849085077     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007124     Document Type: Conference Paper

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