Total ionizing dose effects on 4 Mbit phase change memory arrays

IEEE Transactions on Nuclear Science

Volumn 55, Issue 4, 2008, Pages 2090-2097

  Gasperin, Alberto ^a,b   Wrachien, Nicola ^a   Paccagnella, Alessandro ^a,b   Ottogalli, Federica ^c   Corda, Ugo ^d   Fuochi, Piergiorgio ^d   Lavalle, Marco ^d  

^a UNIVERSITY OF PADOVA   (Italy)

^b SEZIONE DI PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d CNR   (Italy)

Author keywords

Chalcogenide materials; GST; Non volatile memories; Phase change memory; Radiation effects; Total ionizing dose

Indexed keywords

DATA STORAGE EQUIPMENT; FLASH MEMORY; IONIZING RADIATION; PULSE CODE MODULATION; SEMICONDUCTOR STORAGE;

CHALCOGENIDE MATERIALS; GST; NON-VOLATILE MEMORIES; RADIATION EFFECTS; TOTAL IONIZING DOSE;

PHASE CHANGE MEMORY;

EID: 53349171479     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.920425     Document Type: Conference Paper

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