Calculation of heavy ion induced leakage current in n-MOSFETs

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2656-2661

  Loquet, Jean Gabriel ^a   David, Jean Pierre ^a   Briand, Renaud ^b   Fouillat, Pascal ^b  

^a ONERA   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Heavy ion; Leakage current; n MOSFET; Semi permanent degradation; Simulation

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; HEAVY IONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS;

SEMI-PERMANENT FAILURE MODES; STUCK BITS;

MOSFET DEVICES;

EID: 0034450523     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903822     Document Type: Conference Paper

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