Heavy-ion and Total Ionizing Dose (TID) performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2009, Pages 103-105

  Katti, Romney R ^a   Lintz, John ^a   Sundstrom, Lance ^a   Marques, Tony ^b   Scoppettuolo, Steve ^b   Martin, Douglas ^c  

^a HONEYWELL   (United States)

^b CHARLES STARK DRAPER LABORATORY   (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUENCES; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; NON-VOLATILE MEMORIES; TOTAL IONIZING DOSE;

HEAVY IONS; IONIZING RADIATION; MAGNETIC STORAGE; RANDOM ACCESS STORAGE; TECHNICAL PRESENTATIONS;

RADIATION EFFECTS;

EID: 77950940006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2009.5336307     Document Type: Conference Paper

References (7)

1. "HXNV0100 64Kx16 Non-Volatile Magnetic RAM," Honeywell Advanced Information Data Sheet. Honeywell International, Inc., website, www.ssec.honeywell.com/aerospace.
2. S. Tehrani, et al. "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol. 91, no. 5, pp. 703-714, May, 2003.
3. M. Durlam, et al., "A 0.18um 4Mb Toggling MRAM," 2003 IEDM Technical Digest, Session 34, paper no. 6.
4. T. Andre, et al. "A 4Mb 0.18um 1T1MTJ Toggle MRAM with Balanced Three Input Sensing Scheme and Locally Mirrored Unidirectional Write Drivers," IEEE J. of Solid-State Circuits, vol. 40, no. 1, pp. 301-309, January, 2005.
5. L. Savtchenko, et al. "Method of writing to scalable magnetoresistive random access memory elements," U.S. Patent 6,545,906, April 8, 2003.
6. L. Massengill, et al. "Heavy-ion-induced Soft Breakdown of Thin Gate Oxides," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1904-1912, Dec. 2001.
7. J. F. Conley, et al. "Heavy-ion-induced Breakdown in Ultra-Thin Gate Oxides and High-k Dielectrics," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1913-1916, Dec, 2001.