Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2303-2311

  Dodd, P E ^a,b   Schwank, J R ^a,b   Shaneyfelt, M R ^a,b   Felix, J A ^a,b   Paillet, P ^a,c   Ferlet Cavrois, V ^a,c   Baggio, J ^a,c   Reed, R A ^a,d   Warren, K M ^b,d   Weller, R A ^a,d   Schrimpf, R D ^a,d   Hash, G L ^b   Dalton, S M ^b   Hirose, K ^a,e   Saito, H ^a,e  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c CEA DIF   (France)

^d VANDERBILT UNIVERSITY   (United States)

^e JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Indirect ionization; Integrated circuit reliability; Nuclear reactions; Radiation effects; Radiation hardness assurance; Single event effects; Single event latchup; Single event upset; Soft errors

Indexed keywords

INDIRECT IONIZATION; INTEGRATED CIRCUIT RELIABILITY; RADIATION HARDNESS ASSURANCE;

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; IONIZATION; NUCLEAR ENERGY; RADIATION EFFECTS;

HEAVY IONS;

EID: 37249081581     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.909844     Document Type: Conference Paper

References (25)

1. E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE. vol. 76, no. 11, pp. 1423-1442, Nov. 1988.
2. W. J. Stapor, P. T. McDonald, A. R. Knudson, A. B. Campbell, and B. G. Glagola, "Charge collection in silicon for ions of different energy but same linear energy transfer (LET)," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1585-1590, Dec. 1988.
3. T. L. Criswell, P. R. Measel, and K. L. Wahlin, "Single event upset testing with relativistic heavy ions," IEEE Trans. Nucl.. Sci., vol. 31, no. 6, pp. 1559-1562, Dec. 1984.
4. S. Duzellier, D. Falguère, L. Moulière, R. Ecoffet, and J. Buisson, "SEE results using high energy ions," IEEE Trans. Nucl.. Sci., vol. 42, no. 6, pp. 1797-1802, Dec. 1995.
5. O. Musseau, F. Gardic, P. Roche, T. Corbière, R. A. Reed, S. Buchner, P. McDonald, J. Melinger, L. Tran, and A. B. Campbell, "Analysis of multiple bit upsets (MBU) m a CMOS SRAM," IEEE Trans. Nucl.. Sci., vol. 43, no. 6, pp. 2879-2888, Dec. 1996.
6. R. Ecoffet, S. Duzellier, D. Falguère, L. Guibert, and C. Inguimbert, "Low LET cross-section measurements using high energy carbon beam," IEEE Trans. Nucl. Sci., vol. 4, no. 6, pp. 2230-2236, Dec. 1997.
7. R. Koga, S. H. Crain, W. R. Crain, K. B. Crawford, and S. J. Hansel, "Comparative SEU sensitivies to relativistic heavy ions," IEEE Trans. Nucl.. Sci., vol. 45, no. 6, pp. 2475-2482, Dec. 1998.
8. P. E. Dodd, O. Musseau, M. R. Shaneyfelt, F. W. Sexton, C. D'hose, G. L. Hash, M. Martinez, R. A. Loemker, J.-L. Leray, and P. S. Winokur, "Impact of ion energy on single-event upset," IEEE Trans. Nucl.. Sci., vol. 45, no. 6, pp. 2483-2491, Dec. 1998.
9. K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contribution of nuclear reactions to heavy ion single event upset cross section measurements in a high-density SEU hardened SRAM," IEEE Trans. Nucl., Sci., vol. 52, no. 6, pp. 2125-2131, Dec. 2005.
10. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix. V. Ferlet-Cavrois, P. Paillet, D. Lambert, F. W. Sexton, G. L. Hash, and E. W. Blackmore. "Effects of particle energy on proton-induced singleevent latchup," IEEE Trans. Nucl.. Sci., vol. 52, no. 6, pp. 2622-2629, Dec. 2005.
11. R. A. Reed, R. A. Weiler, R. D. Schrimpf, M. H. Mendenhall, K. M. Warren, and L. W. Massengill, "Implications of nuclear reactions for single event effects test methods and analysis," IEEE Trans. Nucl.. Sci., vol. 53, no. 6, pp. 3356-3362, Dec. 2006.
12. P. E. Dodd, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, P. Paillet, J. Baggio, G. L. Hash, J. A. Felix, K. Hirose, and H. Saito, "Heavy ion energy effects in CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp.'889-893, Aug. 2007.
13. M. S. Liu, H. Y. Liu, N. Brewster, D. Nelson, K. W. Golke, G. Kirchner, H. L. Hughes, A. Campbell, and J. F. Ziegler, "Limiting upset cross sections of SEU hardened SOI SRAMs," IEEE Trans. Nucl.. Sci., vol. 53, no. 6, pp. 3487-3493, Dec. 2006.
14. P. W. Marshall, C. J. Dale, and K. A. LaBel, "Space radiation effects in high performance fiber optic data links for satellite data management," IEEE Trans. Nucl.. Sci., vol. 43, no. 2, pp. 645-653, Apr. 1996.
15. S. Duzellier and R. Ecoffet, "Recent trends in single-event effect ground testing," IEEE Trans. Nucl.. Sci., vol. 43. no. 2. pp. 671-677, Apr. 1996.
16. K. Hirose, H. Saito, Y. Kuroda, S. Ishii, Y. Fukuoka, and D. Takahashi, "SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design," IEEE Trans. Nucl.. Sci., vol. 49, no. 6, pp. 2965-2968, Dec. 2002.
17. P. E. Dodd, M. R. Shaneyfelt, K. M. Horn, D. S. Walsh, G. L. Hash, T. A. Hill, B. L. Draper, J. R. Schwank, F. W. Sexton, and P. S. Winokur, "SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1893-1903, Dec. 2001.
18. E. L. Petersen, "Parametric and threshold studies of single event sensitivity," IEEE Trans. Nucl.. Sci., vol. 54, no. 4, pp. 1392-1405, Aug. 2007.'
19. R. A. Reed, R. A. Weller, R. D. Schrimpf, J. A. Pellish, L. W. Massengill, M. H. Mendenhall, K. M. Warren, N. F. Haddad, R. Lawrence, and J. Bowman, "Impact of ion energy and species on single event effects analysis," IEEE Trans. Nucl. Sci., vol. 54, no. 6, Dec. 2007.
20. P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Neutroninduced latchup in SRAMs at ground level," Proc. IRPS, pp. 51-55, 2003.
21. J. A. Felix, P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash, "Radiation response and variability of advanced commercial foundry technologies," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3187-3194, Dec. 2006.
22. K. A. LaBel, P. W. Marshall, J. L. Earth, R. B. Katz, R. A. Reed, H. W. Leidecker, H. S. Kim, and C. J. Marshall. "Anatomy of an in-flight anomaly: Investigation of proton-induced SEE test results for stacked IBM DRAMs," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2898-2903, Dec. 1998.
23. D. E. Fulkerson, D. K. Nelson, and R. M. Carlson, "Boxes: An engineering methodology for calculating soft error rates in SOI integrated circuits," IEEE Trans. Nucl.. Sci., vol. 53, no. 6, pp. 3329-3335, Dec. 2006.
24. K. M. Warren, R. A. Weller, B. D. Sierawski, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, L. W. Massengill, M. E. Porter, J. D. Wilkinson, K. A. LaBel, and J. H. Adams, "Application of RADSAFE to model the single event upset response of a 0.25 μm CMOS SRAM," IEEE Trans. Nucl.. Sci., vol. 54, no. 4, pp. 898-903, Aug. 2007.
25. K. M. Warren, B. D. Sierawski, R. A. Reed, R. A. Weller, C. Carmichael, A. Lesea, M. H. Mendenhall, P. E. Dodd, R. D. Schrimpf, L. W. Massengill, T. Hoang, H. Wan, J. L. De Jong, R. Padovani, and J. J. Fabula, "Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch," IEEE Trans. Nucl. Sci., vol. 54, no. 6, Dec. 2007.