Proton and heavy ion induced semi-permanent upsets in double data rate SDRAMs

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2007, Pages 199-203

  Koga, R ^a,b   Yu, P ^b   Crain, S ^b   George, J ^b  

^a IEEE

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAVY IONS; IONS; RADIATION;

DOUBLE DATA RATES; SPACE RADIATIONS;

RADIATION EFFECTS;

EID: 47849110552     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2007.4342565     Document Type: Conference Paper

References (4)

1. R. Ladbury, et al., "Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node," IEEE Radiation Effects Data Workshop Record, pp126-130, 2006.
2. R. Koga, et al., "Single Event Functional Interrupt (SEFI) Sensitivity in Microcircuits," Proceedings of RADECS97, pp311-318, 1997.
3. J.F. Ziegler, et al, The Stopping and Range of Ions in Solids, New York, Pergamon, 1984.
4. R. Koga, et al., "Permanent Single Event Functional Interrupts (SEFIs) in 128- and 256-megabit Synchronous Dynamic Random Access Memories," IEEE Radiation Effects Data Workshop Record, pp 6-13, 2001.