Total dose radiation hard 0.35 |im SOI CMOS technology

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2442-2449

  Liu, S T ^a,b   Jenkins, W C ^a,c   Hughes, H L ^a,b,c  

^a IEEE   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; LEAKAGE CURRENTS; MOSFET DEVICES; RADIATION HARDENING; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); STANDBY CURRENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0032317363     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736484     Document Type: Article

References (17)

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