New insights into fully-depleted soi transistor response after total-dose irradiation

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 604-612

  Schwank, J R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNEL INTERFACE; POSITIVE CHARGE TRAPPING; TOTAL DOSE IRRADIATION; TRANSISTOR RESPONSE;

DOSIMETRY; GATES (TRANSISTOR); HOLE TRAPS; IMPACT IONIZATION; IONIZING RADIATION; LEAKAGE CURRENTS; RADIATION HARDENING; SILICON ON INSULATOR TECHNOLOGY;

RADIATION EFFECTS;

EID: 0034206978     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856487     Document Type: Article

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