Total dose induced latch in short channel NMOS/SOI transistors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2458-2466

  Ferlet Cavrois, V ^b   Quoizola, S ^a   Musseau, O ^a,b   Flament, O ^b   Leray, J L ^b   Pelloie, J L ^a,b   Raynaud, C ^b   Faynot, O ^a,b  

^a CEA DIF   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; GATES (TRANSISTOR); HYSTERESIS; LEAKAGE CURRENTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

CONDUCTION CURRENTS; LATCH EFFECT;

MOSFET DEVICES;

EID: 0032314292     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736486     Document Type: Article

References (37)

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