Effects of particle energy on proton-induced single-event latchup

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2622-2629

  Schwank, J R ^a,b   Shaneyfelt, M R ^a,b   Baggio, J ^a,c   Dodd, P E ^a,b   Felix, J A ^a,b   Ferlet Cavrois, V ^a,c   Paillet, P ^a,c   Lambert, D ^a,c   Sexton, F W ^a,b   Hash, G L ^a,b   Blackmore, E ^a,d  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c CEA DIF   (France)

^d TRIUMF   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HARDNESS ASSURANCE TESTING; LINEAR ENERGY TRANSFER (LET; PROTON ENERGY; PROTON-INDUCED SEL;

HEAVY IONS; INTEGRATED CIRCUITS; PROTON IRRADIATION; PROTONS; RADIATION HARDENING; SILICON; STATIC RANDOM ACCESS STORAGE; TUNGSTEN;

FLIP FLOP CIRCUITS;

EID: 33144473064     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860672     Document Type: Conference Paper

References (13)

1. A. H. Johnston, "The influence of VLSI technology evolution on radiation-induced latchup in systems," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 505-521, Apr. 1996.
2. D. M. Hiemstra and E. W. Blackmore, "LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2245-2250, Dec. 2003.
3. J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, G. L. Hash, V. Ferlet-Cavrois, P. Paillet, J. Baggio, P. Tangyunyong, and E. Blackmore, "Issues for single-event proton testing of SRAMs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3692-3700, Dec. 2004.
4. M. Shoga and D. Binder, "Theory of single-event latchup in complementary metal-oxide semiconductor integrated circuits," IEEE Trans. Nucl. Sci., vol. 33, no. 6, pp. 1714-1717, Dec. 1986.
5. L. S. Smith, D. K. Nichols, J. R. Coss, W. E. Price, and D. Binder, "Temperature and epi thickness dependence of the heavy ion induced latchup threshold for a CMOS/EP116K static RAM," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1800-1802, Dec. 1987.
6. H. Duarte, "Improvement of the intranuclear cascade code of Bruyeres-le-Chatel (BRIC) at low intermediate energy," in Proc. 10th Int. Conf. Nuclear Reaction Mechanisms, vol. 122, E. Gadioli, Ed., Jun. 2003, pp. 607-616.
7. E. Blackmore, "Operation of the TRIUMF (20-500 MeV) proton irradiation facility," in IEEE Radiation Effects Data Workshop Record, Reno, Nevada, Jul. 2000, pp. 1-5.
8. H. N. Becker, T. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3009-3015, Dec. 2003.
9. E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE, vol. 76, no. 11, pp. 1423-1442, Nov. 1988.
10. K. A. LaBel, P. W. Marshall, J. L. Earth, R. B. Katz, R. A. Reed, H. W. Leidecker, H. S. Kim, and C. J. Marshall, "Anatomy of an in-flight anomaly: Investigation of proton-induced SEE test results for stacked IBM DRAMs," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2898-2903, Dec. 1998.
11. J. Ziegler, J. Biersack, and U. Littmark, The Stopping Power and Range of Ions in Solids. New York: Pergamon, 1996.
12. International Technology Roadmap for Semiconductors. [Online]. Available: http://public.itrs.net/
13. 2 gate dielectric," in IEDM Tech. Dig., Dec. 2002, pp. 433-436.