Bulk Damage Caused by Single Protons in SDRAMs

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1839-1845

  Shindou, H ^a   Kuboyama, S ^a   Ikeda, N ^a   Hirao, T ^b   Matsuda, S ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Bulk damage; Protons; Radiation; Retention time; Sunchronous dynamic random access memory (SDRAM)

Indexed keywords

CHARGE COUPLED DEVICES; CYCLOTRONS; IMAGE SENSORS; INTEGRATED CIRCUITS; IONIZATION; PROTON IRRADIATION; PROTONS;

BULK DAMAGE; RETENTION TIME; SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 1242287955     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820727     Document Type: Conference Paper

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