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A New Class of Single Event Hard Errors
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Swift, G.M.1
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David, J.P.; Loquet, J.G.; Duzellier, S. Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on, pp. 80-86, 2000.
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0035722020
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Ion Induced Stuck Bits in 1T/1C SDRAM Cells
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Edmonds L. D., Guertin S. M., Scheick L. Z., Nguyen D. and Swift G. M., "Ion Induced Stuck Bits in 1T/1C SDRAM Cells," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 1925-1930, Dec. 2000.
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0030362541
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Hard error dose distributions of gate oxide arrays in the laboratory and space environments
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Xapsos, M.A. "Hard error dose distributions of gate oxide arrays in the laboratory and space environments," IEEE Trans. Nucl. Sci., vol. 43 no. 6, pp. 3139-3144, 1994
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Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells Nuclear Science
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Gaillard, R.; Poirault, G. Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells Nuclear Science, IEEE Transactions on, Volume: 41 Issue: 3 Part: 1-2, June 1994 Page(s): 613-618
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L Z. Scheick, S M. Guertin, and G M. Swift Analysis of Radiation Effects on Individual DRAM Cells, IEEE Trans. Nucl. Sci., 47, no. 6, pp. Dec. 2000.
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L Z. Scheick, S M. Guertin, and G M. Swift "Analysis of Radiation Effects on Individual DRAM Cells," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. Dec. 2000.
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Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16Mx4 SDRAM
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To be published
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L.D. Endmonds and L. Z. Scheick "Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16Mx4 SDRAM," To be published.
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Endmonds, L.D.1
Scheick, L.Z.2
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