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Volumn , Issue , 2008, Pages 47-52

Investigation of the mechanism of stuck bits in high capacity SDRAMs

Author keywords

[No Author keywords available]

Indexed keywords

FLUENCE; HIGH CAPACITIES; IN CELLS; RETENTION TIMES;

EID: 56349139265     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2008.15     Document Type: Conference Paper
Times cited : (9)

References (15)
  • 1
    • 0028710490 scopus 로고
    • A New Class of Single Event Hard Errors
    • Dec
    • G.M. Swift, D.J. Padgett, and A.H. Johnston, "A New Class of Single Event Hard Errors," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2043-2048, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci , vol.41 , Issue.6 , pp. 2043-2048
    • Swift, G.M.1    Padgett, D.J.2    Johnston, A.H.3
  • 2
    • 56349137709 scopus 로고    scopus 로고
    • David, J.P.; Loquet, J.G.; Duzellier, S. Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on, pp. 80-86, 2000.
    • David, J.P.; Loquet, J.G.; Duzellier, S. "Heavy ions induced latent stuck bits revealed by total dose irradiation in 4T cells SRAMs Radiation and Its Effects on Components and Systems," 1999. RADECS 99. 1999 Fifth European Conference on, pp. 80-86, 2000.
  • 4
    • 0030362541 scopus 로고
    • Hard error dose distributions of gate oxide arrays in the laboratory and space environments
    • Xapsos, M.A. "Hard error dose distributions of gate oxide arrays in the laboratory and space environments," IEEE Trans. Nucl. Sci., vol. 43 no. 6, pp. 3139-3144, 1994
    • (1994) IEEE Trans. Nucl. Sci , vol.43 , Issue.6 , pp. 3139-3144
    • Xapsos, M.A.1
  • 6
    • 0028449874 scopus 로고
    • Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells Nuclear Science
    • June Pages
    • Gaillard, R.; Poirault, G. Numerical simulation of hard errors induced by heavy ions in 4T high density SRAM cells Nuclear Science, IEEE Transactions on, Volume: 41 Issue: 3 Part: 1-2, June 1994 Page(s): 613-618
    • (1994) IEEE Transactions on , vol.41 , Issue.3 PART 1-2 , pp. 613-618
    • Gaillard, R.1    Poirault, G.2
  • 7
    • 56349141144 scopus 로고    scopus 로고
    • Duzellier, S.; Falguere, D.; Ecoffet, R. Protons and heavy ions induced stuck bits on large capacity RAMs Radiation and its Effects on Components and Systems, 1993, RADECS 93, Second European Conference on, 1994 Page(s): 468-472
    • Duzellier, S.; Falguere, D.; Ecoffet, R. Protons and heavy ions induced stuck bits on large capacity RAMs Radiation and its Effects on Components and Systems, 1993, RADECS 93, Second European Conference on, 1994 Page(s): 468-472
  • 10
    • 56349113328 scopus 로고
    • T.P. Ma and P.V. Dressendorfer editors, Wiley Inter-science
    • T.P. Ma and P.V. Dressendorfer (editors), Ionizing Radiation Effects in MOS Devices and Circuits, Wiley Inter-science, 1989, p. 102.
    • (1989) Ionizing Radiation Effects in MOS Devices and Circuits , pp. 102
  • 11
    • 0034450424 scopus 로고    scopus 로고
    • L Z. Scheick, S M. Guertin, and G M. Swift Analysis of Radiation Effects on Individual DRAM Cells, IEEE Trans. Nucl. Sci., 47, no. 6, pp. Dec. 2000.
    • L Z. Scheick, S M. Guertin, and G M. Swift "Analysis of Radiation Effects on Individual DRAM Cells," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. Dec. 2000.
  • 14
    • 56349154078 scopus 로고    scopus 로고
    • Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16Mx4 SDRAM
    • To be published
    • L.D. Endmonds and L. Z. Scheick "Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16Mx4 SDRAM," To be published.
    • Endmonds, L.D.1    Scheick, L.Z.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.